Related papers: Two-dimensional metal in a parallel magnetic field
We have studied the magnetotransport properties of a high mobility two-dimensional hole gas (2DHG) system in a 10nm GaAs quantum well (QW) with densities in range of 0.7-1.6*10^10 cm^-2 on the metallic side of the zero-field…
We report on a colossal negative magnetoresistance (MR) in GaAs/AlGaAs quantum well which, at low temperatures, is manifested by a drop of the resistivity by more than an order of magnitude at a magnetic field $B \approx 1$ kG. In contrast…
We report the observation of metallic-like behavior at low temperatures and zero magnetic field in two dimensional (2D) electrons in an AlAs quantum well. At high densities the resistance of the sample decreases with decreasing temperature,…
A magnetic field applied parallel to the two-dimensional hole system in the GaAs/AlGaAs heterostructure, which is metallic in the absence of an external magnetic field, can drive the system into insulating at a finite field through a well…
We report transport measurements in HgTe-based quantum wells with well width of 8 nm, corresponding to quantum spin Hall state, subject to in-plane magnetic field. In the absence of the magnetic field the local and nonlocal resistances…
We observe that an in-plane magnetic field ($B_{||}$) can induce an order of magnitude enhancement in the low temperature ($T$) resistivity ($\rho$) of metallic 2D holes in a narrow (10nm) GaAs quantum well. Moreover, we show the first…
Magnetoconductance (MC) in a parallel magnetic field B has been measured in a two-dimensional electron system in Si, in the regime where the conductivity decreases as \sigma (n_s,T,B=0)=\sigma (n_s,T=0) + A(n_s)T^2 (n_s -- carrier density)…
For a two-dimensional (2D) hole system (confined within Ge layers of a multilayered p-Ge/Ge_{1-x}Si_x heterostructure) described by Luttinger Hamiltonian with the g-factor highly anisotropic for orientations of magnetic field perpendicular…
A negative magnetoresistance under the in-plane magnetic field, reaching maximum 30-40% of its zero-field value in fields higher than ~12 T, has been found in wide Ge_{1-x}Si_x/Ge/p-Ge_{1-x}Si_x quantum wells (QW) containing the…
We studied low temperature (T=50mK) in-plane magnetoresistance of a dilute two-dimensional hole system in GaAs/AlGaAs heterostructure that exhibits an apparent metal-insulator transition. We found an anisotropic magnetoresistance, which…
We report on a zero magnetic field transport study of a two-dimensional, variable-density, hole system in GaAs. As the density is varied we observe, for the first time in GaAs-based materials, a crossover from an insulating behavior at…
In this study we have measured the magnetoresistance response of inverted HgTe quantum wells in the presence of a large parallel magnetic field up to 33 T is applied. We show that in quantum wells with inverted band structure a…
The photoluminescence (PL) spectrum of modulation-doped GaAs/AlGaAs quantum wells (MDQW) and heterojunctions (HJ) is studied under a magnetic field ($B_{\|}$) applied parallel to the two-dimensional electron gas (2DEG) layer. The effect of…
We report on a giant negative magnetoresistance in very high mobility GaAs/AlGaAs heterostructures and quantum wells. The effect is the strongest at $B \simeq 1$ kG, where the magnetoresistivity develops a minimum emerging at $T \lesssim 2$…
A detailed investigation of the metallic behaviour in high quality GaAs-AlGaAs two dimensional hole systems reveals the presence of quantum corrections to the resistivity at low temperatures. Despite the low density ($r_{s}>10$) and high…
Experiments on a constant-density two-dimensional hole system in a GaAs quantum well reveal that the metallic behavior observed in the zero-magnetic-field temperature dependence of the resistivity depends on the symmetry of the confinement…
We have developed a technique utilizing a double quantum well heterostructure that allows us to study the effect of a nearby ground-plane on the metallic behavior in a GaAs two-dimensional hole system (2DHS) in a single sample and…
In In_xGa_{1-x}As/n-GaAs double quantum wells (DQWs) containing an electron gas, the magnetoresistance (MR) peculiarities under parallel magnetic fields caused by the passing of the tunnel gap edges through the Fermi level are revealed.…
We study the transport properties of the two-dimensional electron gas in AlGaAs/GaAs heterostructures in parallel to the interface magnetic fields at low temperatures. The magnetoresistance in the metallic phase is found to be positive and…
In a high mobility two-dimensional electron gas (2DEG) in a GaAs/AlGaAs quantum well we observe a strong magnetoresistance. In lowering the electron density the magnetoresistance gets more pronounced and reaches values of more than 300%. We…