We have developed a technique utilizing a double quantum well heterostructure that allows us to study the effect of a nearby ground-plane on the metallic behavior in a GaAs two-dimensional hole system (2DHS) in a single sample and measurement cool-down, thereby maintaining a constant disorder potential. In contrast to recent measurements of the effect of ground-plane screening of the long-range Coulomb interaction in the insulating regime, we find surprisingly little effect on the metallic behavior when we change the distance between the 2DHS and the nearby ground-plane.
@article{arxiv.0804.4049,
title = {The effect of screening long-range Coulomb interactions on the metallic behavior in two-dimensional hole systems},
author = {L. H. Ho and W. R. Clarke and A. P. Micolich and R. Danneau and O. Klochan and M. Y. Simmons and A. R. Hamilton and M. Pepper and D. A. Ritchie},
journal= {arXiv preprint arXiv:0804.4049},
year = {2009}
}
Comments
5 pages, 4 figures, accepted for publication in PRB