Related papers: Point defects on III-V semiconductor surfaces
We demonstrate an atomic force microscopy based method for estimation of defect density by identification of threading dislocations on a non-flat surface resulting from metamorphic growth. The discussed technique can be applied as an…
Non-toxic III-V quantum dots (QDs) are plagued with a higher density of performance-limiting trap states than II-VI and IV-VI QDs. Such trap states are generally understood to arise from under-coordinated atoms on the QD surface. Here, we…
Using the theory of the symmetry group for PDEs [15, 17], we derive the symmetry group G associated to surfaces PDE. Several group invariant solutions of the surfaces PDE are given by solving a reduced system of partial differential…
The integration of III-V on silicon is still a hot topic as it will open up a way to co-integrate Si CMOS logic with photonic vices. To reach this aim, several hurdles should be solved, and more particularly the generation of antiphase…
We present a surface passivation method that reduces surface-related losses by almost two orders of magnitude in a highly miniaturized GaAs open microcavity. The microcavity consists of a curved dielectric distributed Bragg reflector (DBR)…
The phosphide-based III-V semiconductors InP, GaP, and In$_{0.5}$Ga$_{0.5}$P are promising materials for solar panels in outer space and radioisotope batteries, for which lifetime is a major issue. In order to understand high radiation…
The model of spatial-temporal distribution of point defects in a three-layer stressed nanoheterosystem GaAs/In$_x$Ga$_{1 - x}$As/GaAs considering the self-assembled deformation-diffusion interaction is constructed. Within the framework of…
In this paper the characteristic matrix method is used to study the propagation of electromagnetic waves through one-dimensional lossy photonic crystals composed of negative and positive refractive index material layers with symmetric and…
We present an implementation of the linear density response function within the projector-augmented wave (PAW) method with applications to the linear optical and dielectric properties of both solids, surfaces, and interfaces. The response…
Various types of topological defects in graphene are considered in the framework of the continuum model for long-wavelength electronic excitations, which is based on the Dirac--Weyl equation. The condition for the electronic wave function…
We present an approach based on density-functional theory for the calculation of fundamental gaps of both finite and periodic two-dimensional (2D) electronic systems. The computational cost of our approach is comparable to that of total…
We present experimental evidence that the motion of point defects in thermal convection patterns in an inclined fluid layer is well-described by Tsallis statistics with an entropic index $q \approx 1.5$. The dynamical properties of the…
The equilibrium shape of strained InAs quantum dots grown epitaxially on a GaAs(001) substrate is derived as a function of volume. InAs surface energies are calculated within density-functional theory, and a continuum approach is applied…
Defect engineering in two-dimensional (2D) materials is essential for advancing applications such as gas sensing, single-atom catalysis, and guided nanoparticle self-assembly, enabling the creation of materials with tailored…
Combining classical electrodynamics and density functional theory (DFT) calculations, we develop a general and rigorous theoretical framework that describes the energetics of metal surfaces under high electric fields. We show that the…
We study the electronic and structural properties of substitutional impurities of graphenelike nanoporous materials C$_2$N, $tg$-, and $hg$-C$_3$N$_4$ by means of density functional theory calculations. We consider four types of impurities;…
In this paper we study the linear series $|L-3p|$ of hyperplane sections with a triple point $p$ on a surface $S$ embedded via a very ample line bundle $L$ for a \emph{general} point $p$. If this linear series does not have the expected…
Excitons confined to flat semiconductor quantum dots with elliptical cross section are considered as we study geometrical effects on exciton binding energy, electron-hole separation, and the resulting linear optical properties. We use…
We perform first-principles calculations of electronic structure and optical properties for UO2 and PuO2 based on the density functional theory using the generalized gradient approximation (GGA)+\emph{U} scheme. The main features in…
Starting from light to superheavy nuclei, we have calculated the effective surface properties such as the symmetry energy, neutron pressure, and symmetry energy curvature using the coherent density fluctuation model. The isotopic chains of…