Spatial-temporal redistribution of point defects in three-layer stressed nanoheterosystems within the framework of self-assembled deformation-diffusion model

R. M. Peleshchak; N. Y. Kulyk; M. V. Doroshenko

doi:10.5488/CMP.18.23602

Spatial-temporal redistribution of point defects in three-layer stressed nanoheterosystems within the framework of self-assembled deformation-diffusion model

Mesoscale and Nanoscale Physics 2015-06-15 v1

Authors: R. M. Peleshchak , N. Y. Kulyk , M. V. Doroshenko

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Abstract

The model of spatial-temporal distribution of point defects in a three-layer stressed nanoheterosystem GaAs/In $_x$ Ga $_{1 - x}$ As/GaAs considering the self-assembled deformation-diffusion interaction is constructed. Within the framework of this model, the profile of spatial-temporal distribution of vacancies (interstitial atoms) in the stressed nanoheterosystem GaAs/In $_x$ Ga $_{1 - x}$ As/GaAs is calculated. It is shown that in the case of a stationary state ( $t > 5\tau _d^{(2)}$ ), the concentration of vacancies in the inhomogeneously compressed interlayer is smaller relative to the initial average value $N_{d0}^{(2)}$ by 16%

Keywords

three-layer nanoheterosystem point defects self-assembled deformation-diffusion model spatial-temporal redistribution vacancies GaAs/In_xGa_{1-x}As/GaAs stationary state

Cite

@article{arxiv.1506.03967,
  title  = {Spatial-temporal redistribution of point defects in three-layer stressed nanoheterosystems within the framework of self-assembled deformation-diffusion model},
  author = {R. M. Peleshchak and N. Y. Kulyk and M. V. Doroshenko},
  journal= {arXiv preprint arXiv:1506.03967},
  year   = {2015}
}

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12 pages, 5 figures

Spatial-temporal redistribution of point defects in three-layer stressed nanoheterosystems within the framework of self-assembled deformation-diffusion model

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