Related papers: Ballistic reflection at a side-gate in a supercond…
We measure the non-dissipative supercurrent in a single InAs self-assembled quantum dot (QD) coupled to superconducting leads. The QD occupation is both tuned by a back-gate electrode and lateral side-gate. The geometry of the side-gate…
We report the detection of a gate-tunable kinetic inductance in a hybrid InAs/Al nanowire. For this purpose, we have embedded the nanowire into a quarter-wave coplanar waveguide resonator and measured the resonance frequency of the circuit.…
Three different elements, Silicon, Selenium, and Tellurium, are ion-implanted in Gallium arsenide to form a conducting layer that serves as a back-gate to a molecular beam epitaxy (MBE) overgrown two-dimensional electron gas (2DEG). While…
We investigate the transport properties of a junction consisting of an electron-hole bilayer in contact with normal and superconducting leads. The electron-hole bilayer is considered as a semi-metal with two electronic bands. We assume that…
Superconducting diodes are a recently-discovered quantum analogueue of classical diodes. The superconducting diode effect relies on the breaking of both time-reversal and inversion symmetry. As a result, the critical current of a…
We have developed a novel system consisting of a superconducting single-electron transistor (S-SET) coupled to a two-dimensional electron gas (2DEG), for which the dissipation can be tuned in the immediate vicinity of the S-SET. Within…
The demand for low-power devices is on the rise as semiconductor engineering approaches the quantum limit and quantum computing continues to advance. Two-dimensional (2D) superconductors, thanks to their rich physical properties, hold…
Experimental and theoretical studies on transport in semiconductor samples with superconducting electrodes are reported. We focus on the samples close to metal-insulator transition. In metallic samples, a peak of negative magnetoresistance…
We report transport measurements in a single edge channel of an InAs/GaSb quantum spin Hall insulator, where the conduction occurs through only one pair of counterpropagating edge modes. By using a specific sample design involving highly…
We have fabricated and measured ballistic graphene transistors with two oblique gates that can be independently biased. The gate lengths are about 38 nm and are separated by a distance of 30 nm, the tilting angle being of 45o with respect…
The superconducting proximity effect has played an important role in recent work searching for Majorana modes in thin semiconductor devices. Using transport measurements to quantify the changes in the semiconductor caused by the proximity…
Hybrid superconductor/semiconductor devices constitute a powerful platform to investigate the emergence of new topological state of matter. Among all possible semiconductor materials, InAs represents a promising choice, owing to its high…
An inherent difficulty in studying mesoscopic effects in semiconductor--superconductor hybrid structures is the large Schottky barrier which often forms at the interface. A large technological effort has been invested in in improving the…
Voltage-tunable superconductor-semiconductor devices offer a unique platform to realize dynamic tunability in superconducting quantum circuits. By galvanically connecting a gated InAs-Al Josephson junction to a coplanar waveguide resonator,…
By studying the time-dependent axial and radial growth of InSb nanowires, we map the conditions for the synthesis of single-crystalline InSb nanocrosses by molecular beam epitaxy. Low-temperature electrical measurements of InSb nanocross…
We report the observation of Josephson diode effect (JDE) in hybrid devices made from semiconductor InAs nanosheets and superconductor Al contacts. By applying an in-plane magnetic field ($B_{\mathrm{xy}}$), we detect non-reciprocal…
It was recently demonstrated the possibility to tune, through the application of a control gate voltage, the superconducting properties of mesoscopic devices based on Bardeen-Cooper-Schrieffer metals. In spite of the several experimental…
High-quality III-V narrow band gap semiconductor materials with strong spin-orbit coupling and large Lande g-factor provide a promising platform for next-generation applications in the field of high-speed electronics, spintronics, and…
Hybrid semiconductor/superconductor devices constitute an important platform for a wide range of applications, from quantum computing to topological-state-based architectures. Here, we demonstrate full modulation of the interference pattern…
We report on the observation of gate-tunable proximity-induced superconductivity and multiple Andreev reflections (MAR) in a bulk-insulating BiSbTeSe$_2$ topological insulator nanoribbon (TINR) Josephson junction (JJ) with superconducting…