Hybrid semiconductor/superconductor devices constitute an important platform for a wide range of applications, from quantum computing to topological-state-based architectures. Here, we demonstrate full modulation of the interference pattern in a superconducting interference device with two parallel islands of ballistic InAs quantum wells separated by a trench, by acting independently on two side-gates. This so far unexplored geometry enables us to tune the device with high precision from a SQUID-like to a Fraunhofer-like behavior simply by electrostatic gating, without the need for an additional in-plane magnetic field. These measurements are successfully analyzed within a theoretical model of an extended tunnel Josephson junction, taking into account the focusing factor of the setup. The impact of these results on the design of novel devices is discussed.
@article{arxiv.1903.02819,
title = {Full electrostatic control of quantum interference in an extended trenched Josephson junction},
author = {Stefano Guiducci and Matteo Carrega and Fabio Taddei and Giorgio Biasiol and Hervé Courtois and Fabio Beltram and Stefan Heun},
journal= {arXiv preprint arXiv:1903.02819},
year = {2019}
}