Qubits on solid state devices could potentially provide the rapid control necessary for developing scalable quantum information processors. Materials innovation and design breakthroughs have increased functionality and coherence of qubits substantially over the past two decades. Here we show by improving interface between InAs as a semiconductor and Al as a superconductor, one can reliably fabricate voltage-controlled Josephson junction field effect transistor (JJ-FET) that can be used as tunable qubits, resonators, and coupler switches. We find that band gap engineering is crucial in realizing a two-dimensional electron gas near the surface. In addition, we show how the coupling between the semiconductor layer and the superconducting contacts can affect qubit properties. We present the anharmonicity and coupling strengths from one and two-photon absorption in a quantum two level system fabricated with a JJ-FET.
@article{arxiv.2104.01159,
title = {Epitaxial Superconductor-Semiconductor Two-Dimensional Systems for Superconducting Quantum Circuits},
author = {Joseph O'Connell Yuan and Kaushini S. Wickramasinghe and William M. Strickland and Matthieu C. Dartiailh and Kasra Sardashti and Mehdi Hatefipour and Javad Shabani},
journal= {arXiv preprint arXiv:2104.01159},
year = {2021}
}
Comments
This paper is part of the Special Topic Collection: Honoring Dr. Art Gossard's 85th Birthday and his Leadership in the Science and Technology of Molecular Beam Epitaxy