The demand for low-power devices is on the rise as semiconductor engineering approaches the quantum limit and quantum computing continues to advance. Two-dimensional (2D) superconductors, thanks to their rich physical properties, hold significant promise for both fundamental physics and potential applications in superconducting integrated circuits and quantum computation. Here, we report a gate-controlled superconducting switch in GaSe/NbSe2 van der Waals (vdW) heterostructure. By injecting high-energy electrons into NbSe2 under an electric field, a non-equilibrium state is induced, resulting in significant modulation of the superconducting properties. Owing to the intrinsic polarization of ferroelectric GaSe, a much steeper subthreshold slope and asymmetric modulation are achieved, which is beneficial to the device performance. Based on these results, a superconducting switch is realized that can reversibly and controllably switch between the superconducting and normal state under an electric field. Our findings highlight a significant high-energy injection effect from band engineering in 2D vdW heterostructures combining superconductors and ferroelectric semiconductors, and demonstrate the potential applications for superconducting integrated circuits.
@article{arxiv.2409.17586,
title = {Gate-controlled superconducting switch in GaSe/NbSe$_2$ van der Waals heterostructure},
author = {Yifan Ding and Chenyazhi Hu and Wenhui Li and Lan Chen and Jiadian He and Yiwen Zhang and Xiaohui Zeng and Yanjiang Wang and Peng Dong and Jinghui Wang and Xiang Zhou and Yueshen Wu and Yulin Chen and Jun Li},
journal= {arXiv preprint arXiv:2409.17586},
year = {2024}
}