Related papers: A nanoionic diode: Equilibrium rectifying junction…
Rapid development in integrated optoelectronic devices and quantum photonic architectures creates a need for optical fiber to chip coupling with low losses. Here we present a fast and generic approach that allows temperature stable…
In this paper, we report enhanced breakdown characteristics of Pt/BaTiO3/Al0.58Ga0.42N lateral heterojunction diodes compared to Pt/Al0.58Ga0.42N Schottky diodes. BaTiO3, an extreme dielectric constant material, has been used, in this…
The semiconductor diode, which acts as an electrical rectifier and allows unidirectional electronic transports, is the key to information processing in integrated circuits. Analogously, an optical rectifier (or diode) working at specific…
This letter reports a charge transfer p-doping scheme which utilizes one-electron oxidizing molecules to obtain stable, unipolar carbon nanotube transistors with a self-aligned gate structure. This doping scheme allows one to improve…
Electrical control of oxygen off-stoichiometry of transition-metal oxides at room temperature is a desired strategy to simultaneously switch the electrical conductance and magnetism of the device. Although the use of the electrochemical…
Superconducting diodes are proposed non-reciprocal circuit elements that should exhibit non-dissipative transport in one direction while being resistive in the opposite direction. Multiple examples of such devices have emerged in the past…
We theoretically investigate heat transport in hybrid normal metal-superconductor (NS) nanojunctions focusing on the effect of thermal rectification. We show that the heat diode effect in the junction strongly depends on the transmissivity…
Refractory materials exhibit high damage tolerance, which is attractive for the creation of nanoscale field-emission electronics and optoelectronics applications that require operation at high peak current densities and optical intensities.…
A generally applicable model is presented to describe the potential barrier shape in ultra small Schottky diodes. It is shown that for diodes smaller than a characteristic length $l_c$ (associated with the semiconductor doping level) the…
Transistor is a three terminal semiconductor device normally used as an amplifier or as a switch. Here the alternating current (a.c) rectifying property of the transistor is considered. The ordinary silicon diode exhibits a voltage drop of…
The recent demonstration of resonant tunneling transport in nitride semiconductors has led to an invigorated effort to harness this quantum transport regime for practical applications. In polar semiconductors, however, the interplay between…
The study of nonreciprocal wave propagation is of great interests for both fundamental research and engineering applications. Here we demonstrate theoretically and experimentally a bidirectional, nonreciprocal, and high-quality diode that…
Flexible fully transparent diodes with high rectification ratio of 5 e 8 are fabricated with all oxide materials at low temperature. The devices are optically transparent in visible spectra range and electrically robust while mechanically…
Resonant tunneling diodes are formed using AlN/GaN core-shell nanowire heterostructures grown by plasma assisted molecular beam epitaxy on n-Si(111) substrates. By using a coaxial geometry these devices take advantage of non-polar (m-plane)…
Using current-voltage (I-V) and capacitance-voltage (C-V) measurements, we report on the unusual physics and promising technical applications associated with the formation of Schottky barriers at the interface of a one-atom-thick zero-gap…
This work demonstrates high-performance vertical NiO/Ga2O3 heterojunction diodes (HJDs) with a 2-step space-modulated junction termination extension. Distinct from the current state-of-the-art Ga2O3 HJDs, we achieve breakdown voltage…
Efficient, scalable, and magnetic-field-free superconducting diodes are essential for future superconducting electronics; yet, despite significant efforts, such practical devices remain unrealized. The main challenge lies in achieving…
In this work we present silicon process compatible, stable and reliable ($>10^{8}$cycles), high non-linearity ratio at half-read voltage ($>5\times 10^{5}$), high speed ($<60ns$) low operating voltage ($<2V$) back-to-back Schottky diodes.…
Rectification of heat transfer in nanodevices can be realized by combining the system inherent anharmonicity with structural asymmetry. we analyze this phenomenon within the simplest anharmonic system -a spin-boson nanojunction model. We…
Voltage doubler rectifiers are usually applied to systems with high voltage and low current requirement. An X band voltage doubler rectifier has been developed with 72% conversion efficiency. To the best of our knowledge, the obtained…