Related papers: Topological insulator single-electron transistors …
We investigate a topological switch between second-order topological insulators (SOTIs) and topological crystalline insulators (TCIs). Both the SOTI and the TCI are protected by the mirror and inversion symmetries, for which we define the…
We report charge sensing measurements on a silicon quantum dot (QD) with a nearby silicon single electron transistor (SET) acting as an electrometer. The devices are electrostatically formed in bulk silicon using surface gates. We show that…
In this paper we construct a simple, controllable, two dimensional model based on a topological band insulator. It has many attractive properties. (1) We obtain spin-charge separated solitons that are associated with $\pi$ fluxes. (2) It…
We demonstrate via three examples that topological insulators (TI) offer a new platform for plasmonics. First, we show that the collective excitations of a thin slab of a TI display spin-charge separation. This gives rise to purely…
Topological insulator field-effect transistors (TIFETs) built on 2-D quantum spin Hall insulators are being considered as advanced logic transistors due to their potentially superior performance originating from the dissipationless edge…
We demonstrate that the charge-spin conversion efficiency of topological insulators (TI) can be experimentally determined by injecting spin-polarized tunneling electrons into a TI. Through a comparative study between bismuth selenide and…
An Al-AlO_x-Al single-electron transistor (SET) acting as the gate of a narrow (~ 100 nm) metal-oxide-semiconductor field-effect transistor (MOSFET) can induce a vertically aligned Si SET at the Si/SiO_2 interface near the MOSFET channel…
We report a detailed study of low-temperature (mK) transport properties of a silicon double-dot system fabricated by phosphorous ion implantation. The device under study consists of two phosphorous nanoscale islands doped to above the…
Ultra-sensitive detectors and readout devices based on the radio frequency single electron transistor (rf-SET) combine near quantum-limited sensitivity with fast operation. Here we describe a twin rf-SET detector that uses two…
The precession of a ferromagnet leads to the injection of spin current and heat into an adjacent non-magnetic material. Besides, spin-orbit entanglement causes an additional charge current injection. Such a device has been recently proposed…
Hybrid superconductor-semiconductor heterostructures are promising platforms for realizing topological superconductors and exploring Majorana bound states physics. Motivated by recent experimental progress, we theoretically study how…
Topological insulators are non-trivial quantum states of matter which exhibit a gap in the electronic structure of their bulk form, but a gapless metallic electronic spectrum at the surface. Here, we predict a uniaxial strain induced…
Heterostructures combining topological and non-topological materials constitute the next frontier in the effort to incorporate topological insulators (TIs) into functional electronic devices. We show that the properties of the interface…
The description of transport phenomena in devices consisting of arrays of tunnel junctions, and the experimental confirmation of these predictions is one of the great successes of mesoscopic physics. The aim of this paper is to give a…
Solid-state topological insulating phases, characterized by spin-momentum locked edge modes, provide a powerful route for spin and charge manipulation in electronic devices. We propose to control charge and spin transport in the helical…
We study the electronic transport through a noncollinear single-electron spin-valve transistor. It consists of a small metallic island weakly coupled to two ferromagnetic leads with noncollinear magnetization directions. The electric…
We study heterostructures where a two-dimensional topological insulator (TI) is attached to two normal metal (NM) electrodes while an island of a ferromagnetic insulator (FI) with precessing magnetization covers a portion of its lateral…
A major challenge in condensed matter physics is integrating topological phenomena with correlated electron physics to leverage both types of states for next-generation quantum devices. Metal-insulator transitions (MITs) are central to…
We study the charge transfer dynamics between a silicon quantum dot and an individual phosphorous donor using the conduction through the quantum dot as a probe for the donor ionization state. We use a silicon n-MOSFET (metal oxide field…
We review some experimental and theoretical results on the metal-to-insulator transition (MIT) observed at zero magnetic field (B=0) in several two-dimensional electron systems (2DES). Scaling of the conductance and magnetic field…