Related papers: Topological insulator single-electron transistors …
A topological insulator (TI) nanowire (NW), where the core is insulating and the 2D spin-helical Dirac fermion topological surface states (TSS) are circumferentially quantized into a series of 1D sub-bands, promises novel topological…
As a new quantum state, topological insulators have become the focus of condensed matter and material science. The open system research of topological insulators has aroused the interest of many researchers. Recently, many aspects,…
Tunnel transport of interacting spin-polarized electrons through a single-level vibrating quantum dot in external magnetic field is studied. By using density matrix method, the current-voltage characteristics and the dependence of…
We study proximity-induced superconductivity on the surface of a topological insulator (TI), focusing on unconventional pairing. We find that the excitation spectrum becomes gapless for any spin-triplet pairing, such that both subgap bound…
The quantum conductance of the single-electron tunneling (SET) transistor is investigated in this paper by the functional integral approach. The formalism is valid for arbitrary tunnel resistance of the junctions forming the SET transistor…
Measuring single-electron charge is one of the most fundamental quantum technologies. Charge sensing, which is an ingredient for the measurement of single spins or single photons, has been already developed for semiconductor gate-defined…
We have varied the disorder in a two-dimensional electron system in silicon by applying substrate bias. When the disorder becomes sufficiently low, we observe the emergence of the metallic phase, and find evidence for a metal-insulator…
A thin film of a topological insulator (TI) on a dielectric substrate and a bulk TI - dielectric film - bulk TI structure are considered as natural double-well heterostructures suitable for realizing the counterflow superconductivity. The…
The electrostatic behaviour of an 1,3-Cyclobutadiene (C$_{4}$H$_{4}$) based Single Molecular Transistor (SMT) has been investigated using the first principle calculation based on Density functional Theory and non-equilibrium Green's…
The topological magnetoelectric effect (TME) in three-dimensional topological insulators (TIs), described by $\Delta P = \frac{e^2}{2h} N_{\rm Ch}^{(2)} \Delta B$, serves as a condensed-matter realization of the four-dimensional quantum…
Unique electronic spin textures in topological states of matter are promising for emerging spin-orbit driven memory and logic technologies. However, there are several challenges related to the enhancement of their performance, electrical…
Altermagnets are time-reversal broken antiferromagnets, where the $z$ component of the N\'{e}el vector is detectable by anomalous Hall effects. On the other hand, recently proposed $p$-wave magnets are time-reversal preserved…
We study coherent spin transport through helical edge states of topological insulator tunnel-coupled to metallic leads. We demonstrate that unpolarized incoming electron beam acquires finite polarization after transmission through such a…
We report on the status and development of polarization-sensitive detectors for millimeter-wave applications. The detectors are fabricated on single-crystal silicon, which functions as a low-loss dielectric substrate for the microwave…
Exponentially localized surface states are the most distinctive property of a crystal with non-trivial band topology. Such surface states play a key role in characterizing topological insulators (TIs), both in theory and experiments. TIs…
We report on the insulator-to-metal transition in Se-hyperdoped Si layers driven by manipulating the Se concentration via non-equilibrium material processing, i.e. ion implantation followed by millisecond-flash lamp annealing. Electrical…
Topological quantum phase transitions intrinsically intertwine self-similarity and topology of many-electron wave-functions, and divining them is one of the most significant ways to advance understanding in condensed matter physics. Our…
We report on a macroscopic version of the single-electron transistor (SET), which we call the soliton tunneling transistor (STT). The STT, consists of a gate capacitor coupled to a NbSe$_{3}$ crystal with a charge density wave (CDW). The…
Nuclear magnetic resonance (NMR) was recently shown to measure the bulk band inversion of Bi$_2$Se$_3$ through changes in the $^{209}$Bi nuclear quadrupole interaction, and the corresponding tensor of the local electric field gradient was…
We describe a planar silicon metal-oxide-semiconductor (MOS) based single hole transistor, which is compatible with conventional Si CMOS fabrication. A multi-layer gate design gives independent control of the carrier density in the dot and…