Related papers: Proton-Transfer Ferroelectrics with Exceptional Sw…
Ferroelectric materials with switchable electric polarization hold great promise for a plethora of emergent applications, such as post-Moore's law nanoelectronics, beyond-Boltzmann transistors, non-volatile memories, and above-bandgap…
In the quest for reliable and power-efficient memristive devices, ferroelectric tunnel junctions are being investigated as potential candidates. CMOS-compatible ferroelectric hafnium oxides are at the forefront. However, in epitaxial tunnel…
The metastability of the polar phase in HfO2, despite its excellent compatibility with the complementary metal-oxide-semiconductor process, remains a key obstacle for its industrial applications. Traditional stabilization approaches, such…
Although ferroelectric systems inherently exhibit binary switching behavior, recent advances in analog memory device have spurred growing interest in achieving continuous memory states. In this work, we demonstrate ferroelectric amplitude…
Ferroelectric polarization switching, achieved by mechanical forces, enables the storage of stress information in ferroelectrics, and holds promise for human-interfacing applications. The prevailing mechanical approach is locally induced…
Neuromorphic computing, inspired by biological intelligence, offers a pathway to revolutionize artificial intelligence (AI) by unifying memory and processing in an energy-efficient, sustainable framework for data-intensive tasks.…
Ferroelectricity, especially in hafnia-based thin films at nanosizes, has been rejuvenated in the fields of low-power, nonvolatile and Si-compatible modern memory and logic applications. Despite tremendous efforts to explore the formation…
We report nearly single phase Pb(Zr0.14Ti0.56Ni0.30)O3-delta(PZTNi30) ferroelectric having large remanent polarization (15-30 {\mu}C/cm2), 0.3-0.4 V open circuit voltage (VOC), reduced band gap (direct 3.4 eV, and indirect 2.9 eV), large ON…
We investigate ferroelectric- and resistive switching behavior in 18-nm-thick epitaxial BaTiO$_3$ (BTO) films in a model electrolyte-ferroelectric-semiconductor (EFS) configuration. The system is explored for its potential as a…
Solid-state programmable metallization cells have attracted considerable attention as memristive elements for Redox-based Resistive Random Access Memory (ReRAM) for low-power and low-voltage applications. In principle, liquid-state…
Tuneable capacitors are vital for adaptive and reconfigurable electronics, yet existing approaches require continuous bias or mechanical actuation. Here we demonstrate a voltage-programmable ferroelectric memcapacitor based on HfZrO that…
Sliding ferroelectricity in bilayer hexagonal boron nitride (h-BN) offers compelling prospects for next-generation non-volatile memory, yet the atomistic dynamics of electric-field-driven polarization switching remain poorly understood.…
By performing standard PUND (positive-up-negative-down), hysteresis-loop and dielectric measurements on the ferroelectric lead zirconate titanate (PZT) thin-film capacitors subject to bipolar/unipolar electrical cycling, we show that…
Ferroic transition metal oxides, which exhibit spontaneous elastic, electrical, magnetic or toroidal order, exhibit functional properties that find use in ultrastable solid-state memories to sensors and medical imaging technologies. To…
Ultrafast switching of ferroic phases is an important research frontier, with significant technological potential. Yet, current efforts are meeting some key challenges, ranging from limited speeds in ferromagnets to intrinsic volatility of…
Deterministic polarization reversal in ferroelectric and multiferroic films is critical for their exploitation in nanoelectronic devices. While ferroelectricity has been studied for nearly a century, major discrepancies in the reported…
We have fabricated a variety of "PZT-PFW" (PbZr0.52Ti0.48O3)1-x(PbFe2/3W1/3O3)x [PZTFWx; 0.2 < x < 0.4] single-phase tetragonal ferroelectrics via chemical solution deposition (CSD) [polycrystalline] and pulsed laser deposition (PLD)…
Analog switching in ferroelectric devices promises neuromorphic computing with highest energy efficiency, if limited device scalability can be overcome. To contribute to a solution, we report on the ferroelectric switching characteristics…
Understanding the polarization switching mechanisms at play in ferroelectric materials is crucial for their exploitation in electronic devices. The conventional centrosymmetric reference structure-based mechanism which accounts for…
Molecular beam epitaxy (MBE) is a promising synthesis technique for both heterostructure growth and epitaxial integration of ferroelectric BaTiO3. However, a direct measurement of the remnant polarization (P_r) has not been previously…