Although ferroelectric systems inherently exhibit binary switching behavior, recent advances in analog memory device have spurred growing interest in achieving continuous memory states. In this work, we demonstrate ferroelectric amplitude switching at the mesoscopic scale in compositionally graded Ba1-xSrxTiO3 heterostructures, enabling continuous modulation of polarization magnitude without altering its direction, which we defined as amplitude switching. Using switching current measurement, piezoresponse force microscopy and Landau-Ginzburg-Devonshire simulations, we reveal that compositionally graded ferroelectric heterostructure can possess amplitude switching behavior through a double well potential with flattened minima. This behavior supports stable, continuous polarization states and establishes a new platform for analog memory applications. These findings introduce amplitude switching as a new dynamic of the order parameter, paving the way for energy-efficient and reliable analog memory systems.
@article{arxiv.2510.14491,
title = {Ferroelectric amplitude switching and continuous memory},
author = {Gye-Hyeon Kim and Tae Hyun Jung and Seungjoon Sun and Jung Kyu Lee and Jaewoo Han and P. Karuna Kumari and Jin-Hyun Choi and Hansol Lee and Tae Heon Kim and Yoon Seok Oh and Seung Chul Chae and Se Young Park and Sang Mo Yang and Changhee Sohn},
journal= {arXiv preprint arXiv:2510.14491},
year = {2025}
}