Tuneable capacitors are vital for adaptive and reconfigurable electronics, yet existing approaches require continuous bias or mechanical actuation. Here we demonstrate a voltage-programmable ferroelectric memcapacitor based on HfZrO that achieves more than eight stable, reprogrammable capacitance states (3-bit encoding) within a non-volatile window of 24~pF. The device switches at low voltages (3~V), with each state exhibiting long retention (10^5~s) and high endurance (10^6 cycles), ensuring reliable multi-level operation. At the nanoscale, multistate charge retention was directly visualised using atomic force microscopy, confirming the robustness of individual states beyond macroscopic measurements. As a proof of concept, the capacitor was integrated into a high-pass filter, where the programmed capacitive states shift the cutoff frequency over 5~kHz, establishing circuit-level viability. This work demonstrates the feasibility of CMOS-compatible, non-volatile, analogue memory based on ferroelectric HfZrO, paving the way for adaptive RF filters, reconfigurable analogue front-ends, and neuromorphic electronics.
@article{arxiv.2511.09838,
title = {Multibit Ferroelectric Memcapacitor for Non-volatile Analogue Memory and Reconfigurable Filtering},
author = {Deepika Yadav and Spyros Stathopoulos and Patrick Foster and Andreas Tsiamis and Mohamed Awadein and Hannah Levene and Themis Prodromakis},
journal= {arXiv preprint arXiv:2511.09838},
year = {2025}
}