Ferroelectric polarization switching, achieved by mechanical forces, enables the storage of stress information in ferroelectrics, and holds promise for human-interfacing applications. The prevailing mechanical approach is locally induced flexoelectricity with large strain gradients. However, this approach usually requires huge mechanical pressures, which greatly impedes device applications. Here, we report an approach of using triboelectric effect to mechanically, reversibly switch ferroelectric polarization across {\alpha}-In2Se3 ferroelectric memristors. Through contact electrification and electrostatic induction effects, triboelectric units are used to sensitively detect mechanical forces and generate electrical voltage pulses to trigger {\alpha}-In2Se3 resistance switching. We realize multilevel resistance states under different mechanical forces, by which a neuromorphic stress system is demonstrated. Strikingly, we achieve the reversal of {\alpha}-In2Se3 ferroelectric polarization with a record-low mechanical pressure of ~ 10 kPa, and even with tactile touches. Our work provides a fundamental but pragmatic strategy for creating mechanical-tactile ferroelectric memory devices.
@article{arxiv.2503.19298,
title = {Ultralow-pressure mechanical-motion switching of ferroelectric polarization},
author = {Baoyu Wang and Xin He and Jianjun Luo and Yitong Chen and Zhixiang Zhang and Ding Wang and Shangui Lan and Peijian Wang and Xun Han and Yuda Zhao and Zheng Li and Huan Hu and Yang Xu and Zhengdong Luo and Weijin Hu and Bowen Zhu and Jian Sun and Yan Liu and Genquan Han and Xixiang Zhang and Bin Yu and Kai Chang and Fei Xue},
journal= {arXiv preprint arXiv:2503.19298},
year = {2025}
}