Related papers: Epitaxy of strained, nuclear-spin free $^{76}$Ge q…

The spin diffusion/transport in $n$-type (001) GaAs quantum well at high temperatures ($\ge120$ K) is studied by setting up and numerically solving the kinetic spin Bloch equations together with the Poisson equation self-consistently. All…

Hexagonal group IV materials like silicon and germanium are expected to display remarkable optoelectronic properties for future development of photonic technologies. However, the fabrication of hexagonal group IV semiconductors within the…

We report on quantum-interference measurements in top-gated Hall bars of monolayer graphene epitaxially grown on the Si face of SiC, in which the transition from negative to positive magnetoresistance was achieved varying temperature and…

Spin-gapless semiconductors with their unique band structures have recently attracted much attention due to their interesting transport properties that can be utilized in spintronics applications. We have successfully deposited the thin…

We present in this work a simple Quantum Well (QW) structure consisting of GaAs wells with AlGaAs barriers as a probe for measuring the performance of arsine purifiers within a MetalOrganic Vapour Phase Epitaxy system. Comparisons between…

Issues of Ge hut array formation and growth at low temperatures on the Ge/Si(001) wetting layer are discussed on the basis of explorations performed by high resolution STM and in-situ RHEED. Data of HRTEM studies of multilayer Ge/Si…

We use low temperature near-field optical spectroscopy to image the electron density distribution in the plane of a high mobility GaAs quantum well. We find that the electrons are not randomly distributed in the plane, but rather form…

The specific band structure of graphene, with its unique valley structure and Dirac neutrality point separating hole states from electron states has led to the observation of new electronic transport phenomena such as anomalously quantized…

Future spintronics requires the realization of thin film of half-metallic ferromagnets having high Curie temperature and 100\% spin polarization at the Fermi level for potential spintronics applications. In this paper, we report the…

We theoretically investigate the properties of holes in a Si$_{x}$Ge$_{1-x}$/Ge/ Si$_{x}$Ge$_{1-x}$ quantum well in a perpendicular magnetic field that make them advantageous as qubits, including a large ($>$100~meV) intrinsic splitting…

Heteroepitaxial Ge0.98Mn0.02 quantum dots on Si (001) were grown by molecular beam epitaxy. The standard Ge wetting layer-hut-dome-superdome sequence was observed, with no indicators of second phase formation in the surface morphology. We…

Disorder in any form is considered to be highly detrimental to the experimental exploration of novel phenomena in quantum materials with non-trivial band topology. Contrary to established belief, clear topological features are reliably…

Hybrid quantum systems offer a promising platform for studying quantum phenomena and developing applied technologies, benefiting from the individual strengths of their components. Here, we present a novel hybrid quantum platform composed of…

Using four-terminal nonlocal magnetoresistance measurements in lateral spin-valve devices with Si$_{\rm 0.1}$Ge$_{\rm 0.9}$, we study pure spin current transport in a degenerate SiGe alloy ($n \sim$ 5.0 $\times$ 10$^{18}$ cm$^{-3}$). Clear…

The GERmanium Detector Array (GERDA) at the Gran Sasso Underground Laboratory (LNGS) searches for the neutrinoless double beta decay (0{\nu}{\beta}{\beta}) of $^{76}$Ge. Germanium detectors made of material with an enriched $^{76}$Ge…

Candidate systems for topologically-protected qubits include two-dimensional electron gases (2DEGs) based on heterostructures exhibiting a strong spin-orbit interaction (SOI) and superconductivity via the proximity effect. For InAs- or…

We present improved germanium-based constraints on sub-GeV dark matter via dark matter--electron ($\chi$-$e$) scattering using the 205.4 kg$\cdot$day dataset from the CDEX-10 experiment. Using a novel calculation technique, we attain…

We investigate the structural and quantum transport properties of isotopically enriched $^{28}$Si/$^{28}$SiO$_2$ stacks deposited on 300 mm Si wafers in an industrial CMOS fab. Highly uniform films are obtained with an isotopic purity…

The thermodynamic stability of germanium tin $\mathrm{Ge_{1-x}Sn_x}$ alloys is investigated across the composition range $0 \le x \le 1$ by applying density functional theory (DFT) together with the cluster expansion formalism (CE). It is…

The GERDA experiment searches for the neutrinoless double beta decay of Ge-76 using high-purity germanium detectors enriched in Ge-76. The analysis of the signal time structure provides a powerful tool to identify neutrinoless double beta…