Related papers: Epitaxy of strained, nuclear-spin free $^{76}$Ge q…
Superconducting germanium films are an intriguing material for possible applications in fields such as cryogenic electronics and quantum bits. Recently, there has been great deal of progress in hyperdoping of Ga doped Ge using ion…
We report transport mobility measurements for clean, two-dimensional (2D) electron systems confined to GaAs quantum wells (QWs), grown via molecular beam epitaxy, in two families of structures, a standard, symmetrically-doped GaAs set of…
A possible mechanism for the formation of a 90{\deg} misfit dislocation at the Ge/Si(001) interface through homogeneous nucleation is identified from atomic scale calculations where a minimum energy path connecting the coherent epitaxial…
Raman light scattering, low-temperature photoluminescence, light-scattering tomography, and hydrogenation were used to investigate optical properties of defects in strain-relaxed Si_{1-x}Ge_x (0.05 \le x \le 0.50) alloys. The…
The EDELWEISS collaboration has performed a search for dark matter particles with masses below the GeV-scale with a 33.4-g germanium cryogenic detector operated in a surface lab. The energy deposits were measured using a…
Germanium is reemerging as a prominent material in the semiconductor field, particularly for electronic applications, photonics, photovoltaics and thermophotovoltaics. Its combination with III-V compound semiconductors through epitaxial…
The $\ge73m$ metastable states decay with a very characteristic signature which allow them to be tagged event-by-event. Studies were performed using data taken with a high-purity germanium detector in a low-background laboratory near a…
General nonequilibrium quantum transport equations are derived for a coupled system of charge carriers, Dirac spin, isospin (or valley spin), and pseudospin, such as either one of the band, layer, impurity, and boundary pseudospins.…
We have measured the temperature (0.1 < T < 15 K) and magnetic field (0 < B < 32 T) dependences of longitudinal and Hall resistivities for the p-Ge_{1-x}Si_x/Ge, x=~0.07, multilayers with different Ge layer widths 10 < d_w < 38 nm and hole…
We report the observation of the quantum-confined Stark effect in Ge/SiGe multiple quantum well heterostructures grown on Si(0.22)Ge(0.78) virtual substrates. The large compressive strain in the Ge quantum well layers caused by the lattice…
The valley in the band structure of materials has gained a lot of attention recently. The promising applications of the valley degree of freedom include the next-generation valleytronic devices, quantum information processing, quantum…
A new technique of elucidating $\beta$-decay schemes of isotopes with large density of states at low excitation energies has been developed, in which a Broad Energy Germanium (BEGe) detector is used in conjunction with coaxial hyper-pure…
Germanium-Tin (GeSn) alloys have emerged as a promising material for future optoelectronics, energy harvesting and nanoelectronics owing to their direct bandgap and compatibility with existing Si-based electronics. Yet, their metastability…
The intermediate- and high-spin level structure of the odd-$A$ $^{69}$Ga nucleus was investigated via the $^{26}$Mg($^{48}$Ca, $p4n\gamma$) fusion evaporation reaction at a beam energy of 195 MeV. The experiment was performed using the…
Monolayer germanium sulfide is gaining significant attention for its exceptional anisotropic electronic conductance, notable excitonic effects, and wide range of potential applications. In our study, we used density functional theory,…
Realistic nuclear structure calculations are presented for the event rates due to coherent elastic neutrino-nucleus scattering (CE$\nu$NS), assuming neutrinos from pion-decay at-rest, from nuclear reactors and from Earth's interior. We…
Isospin transport phenomena in dissipative heavy ion collisions have been investigated at Fermi energies with a beam of 84Kr at 35AMeV. A comparison of the <N>/Z of light and medium products forward-emitted in the centre of mass frame when…
Electron scattering on both neutral ($X$) and charged ($X^-$) excitons in quantum wells is studied theoretically. A microscopic model is presented, taking into account both elastic and dissociating scattering. The model is based on…
Motivated by recent all optical NMR experiments\cite{Awschalom1,Awschalom2} on GaAs quantum wells, we propose new experiments that would involve creating spatially modulated nuclear spin profiles. Due to the hyperfine coupling these would…
Spin qubits defined by valence band hole states comprise an attractive candidate for quantum information processing due to their inherent coupling to electric fields enabling fast and scalable qubit control. In particular, heavy holes in…