Related papers: Epitaxy of strained, nuclear-spin free $^{76}$Ge q…
Direct phonon spin-lattice relaxation of an electron qubit bound by a donor impurity or quantum dot in SiGe heterostructures is investigated. The aim is to evaluate the importance of decoherence from this mechanism in several important…
We present \textbf{GeQuLEP} (Germanium-based Quantum Sensors for Low-Energy Physics), a conceptual design for an advanced quantum sensing platform integrating high-purity germanium (Ge) crystals with engineered phononic crystal cavities. At…
The electronic quality of two-dimensional systems is crucial when exploring quantum transport phenomena. In semiconductor heterostructures, decades of optimization have yielded record-quality two-dimensional gases with transport and quantum…
We investigate carrier transport in a single 22 nm-thick double-gated Si quantum well device, which has independent contacts to electrons and holes. Conductance, Hall density and Hall mobility are mapped in a broad double-gate voltage…
Inverted HgTe/CdTe quantum wells have been used as a platform for the realization of 2D topological insulators, bulk insulator materials with spin-helical metallic edges states protected by time-reversal symmetry. This work investigates the…
A 2D layer of spherical, crystalline Ge nanodots embedded in SiO2 was formed by low pressure chemical vapour deposition combined with furnace oxidation and rapid thermal annealing. The samples were characterized structurally by using…
Hole spin qubits in Ge/GeSi heterostructures benefit from the clean environment of epitaxial interfaces and from the intrinsic spin-orbit coupling that enables efficient electrical control, which makes them promising candidates for quantum…
The performance and scalability of rare-event physics experiments depend on large-volume, detector-grade high-purity germanium (HPGe) crystals with precise control of impurity segregation during growth. We report a detailed study of…
Complementary to the development of highly three-dimensional (3D) integrated circuits in the continuation of Moore's law, there has been a growing interest in new 3D deformation strategies to improve device performance. To continue this…
Quantum dot heterostructures with excellent low-noise properties became possible with high purity materials recently. We present a study on molecular beam epitaxy grown quantum wells and quantum dots with a contaminated aluminum evaporation…
The development of Si-compatible active photonic devices is a high priority in computer and modern electronics industry. Ge is compatible with Si and is a promising light emission material. Nearly all Ge-on-Si materials reported so far were…
Global optimization of transition paths in complex atomic scale systems is addressed in the context of misfit dislocation formation in a strained Ge film on Si(001). Such paths contain multiple intermediate minima connected by minimum…
We report on transport experiments through high-mobility gate-tunable undoped InSb QWs. Due to the elimination of any Si modulation doping, the gate-defined two-dimensional electron gases in the quantum wells display a significantly…
The dynamic polarization of nuclear spins by photoexcited electrons is studied in a high quality GaAs/AlGaAs quantum well. We find a surprisingly high efficiency of the spin transfer from the electrons to the nuclei as reflected by a…
The GERmanium Detector Array (GERDA) experiment located at the INFN Gran Sasso Laboratory (Italy), is looking for the neutrinoless double beta decay of Ge76, by using high-purity germanium detectors made from isotopically enriched material.…
Semiconductor superlattices have been extensively investigated for thermoelectric applications, to explore the effects of compositions, interface structures, and lattice strain environments on the reduction of thermal conductivity, and…
The thermal coefficient of resistance (TCR) for epitaxial silicon-germanium (SiGe) layers has been analyzed by experiment and simulation. Predictive simulation using drift-diffusion formalism and self-consistent quantum-mechanical solutions…
We study high-temperature spin transport through an anisotropic spin-1/2 Heisenberg chain in which integrability is broken by a single impurity close to the center of the chain. For a finite impurity strength, the level spacing statistics…
The dipole strength of the nuclide $^{76}$Ge was studied in photon-scattering experiments using bremsstrahlung produced with electron beams of energies of 7.8 and 12.3 MeV at the $\gamma$ELBE facility. We identified 210 levels up to an…
We have investigated experimentally the electronic transport properties of a two-dimensional electron gas (2DEG) present in an AlSb/InAs/AlSb quantum well, where part of the toplayer has been replaced by a superconducting Nb strip, with an…