The thermal coefficient of resistance (TCR) for epitaxial silicon-germanium (SiGe) layers has been analyzed by experiment and simulation. Predictive simulation using drift-diffusion formalism and self-consistent quantum-mechanical solutions yielded similar results, TCR around 2%/K at 300 K. This modeling approach can be used for different, graded and constant, SiGe profiles,. It is also capable of predicting the influence of background auto-doping on the TCR of the detectors
@article{arxiv.1112.2043,
title = {Characterization and Predictive Modeling of Epitaxial Silicon-Germanium Thermistor Layers},
author = {B. Gunnar Malm and Mohammadreza Kolahdouz and Fredrik Forsberg and Frank Niklaus},
journal= {arXiv preprint arXiv:1112.2043},
year = {2013}
}