The thermal characteristics of silicon between 15 and 300 deg K are investigated by applying a computer program on the solution of the differential heat diffusion equation. The computer model is linked to high-purity silicon through a set of experimental data. The numerical results are given in graphic form and show, in particular, very short diffusion transit times across long distances. The computed figures require experimental confrontations; a test set-up is proposed.
@article{arxiv.0708.4080,
title = {Computer simulated heat flow dynamics in Silicon at low temperatures},
author = {H. Diedrich and R. Liberati},
journal= {arXiv preprint arXiv:0708.4080},
year = {2007}
}