Related papers: Epitaxy of strained, nuclear-spin free $^{76}$Ge q…
Thin films of the ferromagnet Fe$_2$Ge were grown via molecular beam epitaxy, and their electrical and magneto-transport properties measured for the first time. X-ray diffraction and vibrating sample magnetometry measurements confirmed the…
We report the first experimental demonstration of electrical spin injection, transport and detection in bulk germanium (Ge). The non-local magnetoresistance in n-type Ge is observable up to 225K. Our results indicate that the spin…
Spin defects in atomically thin two-dimensional (2D) materials such as hexagonal boron nitride (hBN) attract significant attention for their potential quantum applications. The layered host materials not only facilitate seamless integration…
InSb$_{1-x}$As$_{x}$ is a promising material system for exploration of topological superconductivity in hybrid superconductor/semiconductor devices due to large effective g-factor and enhanced spin-orbit coupling when compared to binary…
Strained germanium heterostructures are one of the most promising material for hole spin qubits but suffer from the strong anisotropy of the gyromagnetic factors that hinders the optimization of the magnetic field orientation. The figures…
The electrical transport properties of epitaxial graphene layers are correlated with the SiC surface morphology. In this study we show by atomic force microscopy and Raman measurements that the surface morphology and the structure of the…
The current carried by a material subject to an electric field is microscopically inhomogeneous and can be modelled using scattering theory, in which electrons undergo collisions with the microscopic objects they encounter. We herein…
Hybrid Superconductor-Semiconductor (S-Sm) materials systems are promising candidates for quantum computing applications. Their integration into superconducting electronics has enabled on-demand voltage tunability at millikelvin…
Quantized magnetotransport is observed in 5.6 x 5.6 mm^2 epitaxial graphene devices, grown using highly constrained sublimation on the Si-face of SiC(0001) at high temperature (1900 {\deg}C). The precise quantized Hall resistance of Rxy =…
We report on the transport properties of a high mobility two-dimensional hole system (2DHS) confined in GaAs/AlGaAs quantum wells grown molecular-beam epitaxy on the (100) surface of GaAs. The quantum wells are modulation-doped with carbon…
A natural broad energy germanium (BEGe) detector is operated in the China Jinping Underground Laboratory (CJPL) for a feasibility study of building the next generation experiment of the neutrinoless double-beta (0{$\nu\beta\beta$}) decay of…
We present a few electron double quantum dot (QD) device defined in an isotopically purified $^{28}$Si quantum well (QW). An electron mobility of $5.5 \cdot 10^4 cm^2(Vs)^{-1}$ is observed in the QW which is the highest mobility ever…
GERDA is an experiment designed to look for the neutrinoless double beta decay of Ge-76. The experiment uses an array of high-purity germanium detectors, enriched in Ge-76, directly immersed in liquid argon. GERDA is presently operating…
We assess the viability of topological semimetals for application in advanced interconnect technology, where conductor size is on the order of a few nanometers and grain boundaries are expected to be prevalent. We investigate the electron…
We performed classical molecular dynamics simulations to investigate, from an atomistic point of view, the formation of dislocations during the epitaxial growth of Ge on Si. We show that simulations at 900 and 1000 K with deposition rates…
We report the first realization of molecular beam epitaxy grown strained GaN quantum well field-effect transistors on single-crystal bulk AlN substrates. The fabricated double heterostructure FETs exhibit a two- dimensional electron gas…
We use first-principles electronic structure methods to calculate the electronic thermoelectric properties (i.e. due to electronic transport only) of single-crystalline bulk $n$-type silicon-germanium alloys vs Ge composition, temperature,…
Germanium-Tin is emerging as a material exhibiting excellent photonic properties. Here we demonstrate optical initialization and readout of spins in this intriguing group IV semiconductor alloy and report on spin quantum beats between…
In modern GaAs/Al$_x$Ga$_{1-x}$As heterostructures with record high mobilities, a two-dimensional electron gas (2DEG) in a quantum well is provided by two remote donor $\delta$-layers placed on both sides of the well. Each $\delta$-layer is…
Hybrid superconductor-semiconductor structures attract increasing attention owing to a variety of potential applications in quantum computing devices. They can serve to the realization of topological superconducting systems, as well as…