Related papers: A scalable non-superconducting tunnel junction tec…

We present a structure and a fabrication method for superconducting tunnel junctions down to the dimensions of 200 nm using i-line UV lithography. The key element is a side-wall-passivating spacer structure (SWAPS) which is shaped for…

We have developed an efficient scalable kernel method for thermal transport in open systems, with which we have computed the thermal conductance of a junction between bulk silicon and silicon nanowires with diameter up to 10 nm. We have…

We have fabricated superconductor-quantum dot-superconductor (SC-QD-SC) junctions by using SC aluminum electrodes with narrow gaps laterally contacting a single self-assembled InAs QD. The fabricated junctions exhibited clear Coulomb…

Large-scale quantum computing requires cryogenic electronic controllers such as control/readout circuit and routing circuit. However, current technologies face high power dissipation problems, hindering large-scale qubit integration. Here,…

We report a complementary metal oxide semiconductor (CMOS) technology compatible ferroelectric tunnel junction memristor grown directly on top of a Silicon substrate using a scandium doped aluminum nitride as the ferroelectric layer.

We have studied thermal gradients in thin Cu and AlMn wires, both experimentally and theoretically. In the experiments, the wires were Joule heated non-uniformly at sub-Kelvin temperatures, and the resulting temperature gradients were…

Due to their wide band gaps, III-N materials can exhibit behaviors ranging from the semiconductor class to the dielectric class. Through an analogy between a Metal/AlGaN/AlN/GaN diode and a MOS contact, we make use of this dual nature and…

The narrow bandgap of semiconductors allows for thick, uniform Josephson junction barriers, potentially enabling reproducible, stable, and compact superconducting qubits. We study vertically stacked van der Waals Josephson junctions with…

The most commonly used physical realization of superconducting qubits for quantum circuits is a transmon. There are a number of superconducting quantum circuits applications, where Josephson junction critical current reproducibility over a…

We report transport measurements down to T=60mK of SININ and SNIN structures in the diffusive limit. We fabricated Al-AlOx/Cu/AlOx/Cu (SININ) and Al/Cu/AlOx/Cu (SNIN) vertical junctions. For the first time, a zero bias anomaly was observed…

Magnetic tunnel junctions (MTJs) are crucial components in high-performance spintronic devices. Traditional MTJs rely on ferromagnetic (FM) materials but significant improvements in speed and packing density could be enabled by exploiting…

We have fabricated longitudinal nanoconstrictions in the charge-density wave conductor (CDW) NbSe$_{3}$ using a focused ion beam and using a mechanically controlled break-junction technique. Conductance peaks are observed below the…

We demonstrate experimentally manipulation of supercurrent in Al-AlO_x-Ti Josephson tunnel junctions by injecting quasiparticles in a Ti island from two additional tunnel-coupled Al superconducting reservoirs. Both supercurrent enhancement…

To test the quality of a tunnel junction, one sometimes fits the bias-dependent differential conductance to a theoretical model, such as Simmons's formula. Recent experimental work by {\AA}kerman and collaborators, however, has demonstrated…

In their article, Zhang et al. [Phys. Rev. B 86, 024516 (2012)] present a remarkable result for A$_x$(S)$_y$TiNCl compounds ($\alpha$-phase TiNCl partially intercalated with alkali A and optionally co-intercalated molecular species S),…

We demonstrate that at the usual 1E-7 torr range of base pressures in the sputtering chamber, X-ray photoelectron spectroscopy shows the existence of a thin AlOx layer at the Nb/Al interface in both Nb/Al-AlOx/Pb tunnel junctions and Nb/Al…

Josephson tunnel junctions are widely used as nonlinear elements in superconducting circuits such as low noise amplifiers and quantum bits. However, microscopic defects in the oxide tunnel barrier can produce low and high frequency noise…

We demonstrate a 36$\times$36 gate electrode crossbar that supports 648 narrow-channel field effect transistors (FET) for gate-defined quantum dots, with a quadratic increase in quantum dot count upon a linear increase in control lines. The…

Scaling up superconducting quantum processors requires a high routing density for readout and control lines, relying on low-loss interconnects to maintain design flexibility and device performance. We propose and demonstrate a universal…

Ultrathin dielectric tunneling barriers are critical to Josephson junction (JJ) based superconducting quantum bits (qubits). However, the prevailing technique of thermally oxidizing aluminum via oxygen diffusion produces problematic…