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A CMOS Compatible Aluminum Scandium Nitride-based Ferroelectric Tunnel Junction Memristor

Materials Science 2021-01-07 v2 Mesoscale and Nanoscale Physics Strongly Correlated Electrons Applied Physics
Authors: Xiwen Liu , Jeffrey Zheng , Dixiong Wang , Pariasadat Musavigharavi , Eric A. Stach , Roy Olsson , Deep Jariwala
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Abstract

We report a complementary metal oxide semiconductor (CMOS) technology compatible ferroelectric tunnel junction memristor grown directly on top of a Silicon substrate using a scandium doped aluminum nitride as the ferroelectric layer.

Keywords

ferroelectric tunnel junction memristor cmos compatible aluminum scandium nitride silicon substrate

Cite

@article{arxiv.2012.10019,
  title  = {A CMOS Compatible Aluminum Scandium Nitride-based Ferroelectric Tunnel Junction Memristor},
  author = {Xiwen Liu and Jeffrey Zheng and Dixiong Wang and Pariasadat Musavigharavi and Eric A. Stach and Roy Olsson and Deep Jariwala},
  journal= {arXiv preprint arXiv:2012.10019},
  year   = {2021}
}

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