Lateral electron tunneling through single self-assembled InAs quantum dots coupled to superconducting nanogap electrodes

K. Shibata; C. Buizert; A. Oiwa; K. Hirakawa; S. Tarucha

doi:10.1063/1.2779970

Lateral electron tunneling through single self-assembled InAs quantum dots coupled to superconducting nanogap electrodes

Mesoscale and Nanoscale Physics 2007-11-14 v1 Superconductivity

Authors: K. Shibata , C. Buizert , A. Oiwa , K. Hirakawa , S. Tarucha

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Abstract

We have fabricated superconductor-quantum dot-superconductor (SC-QD-SC) junctions by using SC aluminum electrodes with narrow gaps laterally contacting a single self-assembled InAs QD. The fabricated junctions exhibited clear Coulomb staircases and Coulomb oscillations at 40 mK. Furthermore, clear suppression in conductance was observed for the source-drain voltage $|V_{\rm SD}| < 2\Delta/e$ , where $\Delta$ is the SC energy gap of Al. The absence of Josephson current that flows through QDs is due to the strong Coulomb interaction and non-negligible thermal fluctuation in our measurement system.

Keywords

lateral electron tunneling self-assembled InAs quantum dots superconducting nanogap electrodes SC-QD-SC junctions Coulomb staircase Coulomb oscillations Josephson current

Cite

@article{arxiv.0711.1945,
  title  = {Lateral electron tunneling through single self-assembled InAs quantum dots coupled to superconducting nanogap electrodes},
  author = {K. Shibata and C. Buizert and A. Oiwa and K. Hirakawa and S. Tarucha},
  journal= {arXiv preprint arXiv:0711.1945},
  year   = {2007}
}

Lateral electron tunneling through single self-assembled InAs quantum dots coupled to superconducting nanogap electrodes

Abstract

Keywords

Cite

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