Related papers: A scalable non-superconducting tunnel junction tec…
We calculate the junction resistance for a metal-barrier-metal device with the barrier tuned to lie just on the insulating side of the metal-insulator transition. We find that the crossover from tunneling behavior in thin barriers at low…
Traditional transistors based on complementary metal-oxide-semiconductor (CMOS) and metal-oxide-semiconductor field-effect transistors (MOSFETs) are facing significant limitations as device scaling reaches the limits of Moore's Law. These…
Ferroelectric tunnel junctions offer potential for non-volatile memory with low power, fast switching, and scalability, but their performance is limited by a high resistance-area product and a low tunnel electroresistance ratio. To address…
The article is focused on low temperature intermetallic A15 superconducting wires development for Nuclear Magnetic Resonance, NMR, and Nuclear Magnetic Imaging, MRI, magnets and also on cryogen-free magnets. There are many other…
In this paper, we have built a numerical p-n Si/GaAs heterojunction model using a quantum-mechanical tunneling theory with various quantum tunneling interfacial materials including two-dimensional semiconductors such as hexagonal boron…
It has been proposed that the superconducting transition temperature $T_{\mathrm{c}}$ of an unconventional superconductor with a large pairing scale but strong phase fluctuations can be enhanced by coupling it to a metal. However, the…
Atomic Layer Deposition (ALD) is a promising technique for producing Josephson junctions (JJs) with lower defect densities for qubit applications. A key problem with using ALD for JJs is the interfacial layer (IL) that develops underneath…
Double barrier heterostructures are model systems for the study of electron tunneling and discrete energy levels in a quantum well (QW). Until now resonant tunneling phenomena in metallicQW have been observed for limited thicknesses (1-2…
Magnetic tunnel junctions (MTJs) with conventional bulk ferromagnets separated by a nonmagnetic insulating layer are key building blocks in spintronics for magnetic sensors and memory. A radically different approach of using atomically-thin…
The linear conductance of a tunnel junction in series with an ohmic resistor is determined in the high temperature limit. The tunneling current is treated nonperturbatively by means of path integral techniques. Due to quantum effects the…
Electronic transport in multiwall carbon nanotubes and semiconductor nanowires was compared. In both cases, the non ohmic behavior of the conductance, the so-called zero bias anomaly, shows a temperature dependence that scales with the…
We demonstrate both theoretically and experimentally two limiting factors in cooling electrons using biased tunnel junctions to extract heat from a normal metal into a superconductor. Firstly, when the injection rate of electrons exceeds…
We determine the zero-bias anomaly of the conductance of tunnel junctions by an approach unifying the conventional Coulomb blockade theory for ultrasmall junctions with the diffusive anomalies in disordered conductors. Both,…
Scalability in the fabrication and operation of quantum computers is key to move beyond the NISQ era. So far, superconducting transmon qubits based on aluminum Josephson tunnel junctions have demonstrated the most advanced results, though…
Nb/Al_2O_3/Ni_{0.6}Cu_{0.4}/Nb based superconductor-insulator-ferromagnet-superconductor (SIFS) Josephson tunnel junctions with a thickness step in the metallic ferromagnetic \Ni_{0.6}\Cu_{0.4} interlayer were fabricated. The step was…
Multilayer nanoscale systems incorporating buried ultrathin tunnel oxides, 2D materials, and solid electrolytes are crucial for next-generation logics, memory, quantum and neuro-inspired computing. Still, an ultrathin layer control at…
Devices made of few molecules constitute the miniaturization limit that both inorganic and organic-based electronics aspire to reach. However, integration of millions of molecular junctions with less than 100 molecules each has been a long…
AlN and ZnO, two wide band-gap semiconductors extensively used in the display industry, crystallise in the wurtzite structure, which can favour the formation of epitaxial interfaces to close-packed common ferromagnets. Here we explore these…
Extremely long coherence times, excellent single-qubit gate fidelities and two-qubit logic have been demonstrated with silicon metal-oxide-semiconductor spin qubits, making it one of the leading platforms for quantum information processing.…
Atomically precise donor-based quantum devices are a promising candidate for scalable solid-state quantum computing. Atomically precise design and implementation of the tunnel coupling in these devices is essential to realize gate-tunable…