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Electrical-resistivity and magnetic-susceptibility measurements under hydrostatic pressure up to p = 2.75 GPa have been performed on superconducting LiFeP. A broad superconducting (SC) region exists in the temperature - pressure (T-p) phase…
Scalable substitutional doping of two-dimensional (2D) transition metal dichalcogenides (TMDCs) is a prerequisite to developing next-generation logic and memory devices based on 2D materials. To date, doping efforts are still nascent. Here,…
We propose a new scintillation-type detector in which high-energy radiation produces electron-hole pairs in a direct-gap semiconductor material that subsequently recombine producing infrared light to be registered by a photo-detector. The…
We report the demonstration of high-performance top-gated metal-oxide-semiconductor field-effect transistors (MOSFETs) based on the ultra-wide bandgap perovskite oxide SrSnO$_3$ (SSO). Using hybrid molecular beam epitaxy-grown SSO channels…
As the size of transistors shrinks and power density increases, thermal simulation has become an indispensable part of the device design procedure. However, existing works for advanced technology transistors use simplified empirical models…
Better wall plug efficiency of deep-ultraviolet light emitting diodes (DUV-LEDs) requires simultaneous low resistivity p-type and n-type contacts, which is a challenging problem. In this study, the co-optimization of p-InGaN and n- AlGaN…
Light-emitting diodes (LEDs) based on III-V/II-VI materials have delivered a compelling performance in the mid-infrared (mid-IR) region, which enabled wide-ranging applications, including environmental monitoring, defense and medical…
Reducing the contact resistance of field-effect transistors based on two-dimensional materials is one of the key improvements required to enable the integration of such transistors in an advanced semiconductor manufacturing process.…
We investigate bulk superconductivity in a high-quality single crystal of Bi$_2$Pd ($\beta$-Bi$_2$Pd, space group; I4/mmm) at temperatures less than 5.4 K by exploring its electrical resistivity, magnetic susceptibility, and specific heat.…
We report a novel method to reduce the collector-emitter offset-voltage of the wide bandgap SiC-P-emitter lateral HBTs using a dual-bandgap emitter. In our approach, the collector-emitter offset-voltage VCE(offset) is reduced drastically by…
Perovskite solar cells (PSCs) with transparent electrodes can be integrated with existing solar panels in tandem configurations to increase the power conversion efficiency. A critical layer in semi-transparent PSCs is the inorganic buffer…
Semiconductors simultaneously possessing high carrier mobility, moderate bandgap, and ambient environment stability are so important for the modern industry, and Si-based semiconducting materials can match well with the previous silicon…
Thermal transistor is an efficient heat control device which can act as a heat switch as well as a heat modulator. In this paper, we study systematically one-dimensional and two-dimensional thermal transistors. In particular, we show how to…
With a generic model for the electron-phonon spectral density, two simple expressions are derived to estimate the transition temperature and gap-to-temperature ratio in conventional superconductors. They entail that on average the numerical…
Semiconductor-superconductor hybrids are widely used for realising complex quantum phenomena such as topological superconductivity and spins coupled to Cooper pairs. Accessing exotic regimes at high magnetic fields and increasing operating…
We demonstrate dual-gated $p$-type field-effect transistors (FETs) based on few-layer tungsten diselenide (WSe$_2$) using high work-function platinum source/drain contacts, and a hexagonal boron nitride top-gate dielectric. A device…
The in-plane and out-of-plane surface impedance and microwave conductivity components of one and the same YBa_2Cu_3O_{7-x} (0.07\le x\le 0.47) single crystal are determined in the wide ranges of temperature T and carrier concentration p in…
A device and process strategy for achieving reliable indium gallium zinc oxide and indium oxide transistors compatible with a 400oC BEOL thermal budget and without performance degradation is demonstrated by fully exploiting intrinsic oxide…
PbSe is a low-gap semiconductor with excellent infrared photo-detection properties. Here we report our high magnetic field and low temperature electrical properties measurement performed on a moderately doped PbSe single crystals with…
Two-dimensional materials are attractive for constructing high-performance photonic chip-integrated photodetectors because of their remarkable electronic and optical properties and dangling-bond-free surfaces. However, the reported…