Related papers: Efficient and Robust p-type Transistor based on Ul…
Advancement of optoelectronic and high-power devices is tied to the development of wide band gap materials with excellent transport properties. However, bipolar doping (n-type and p-type doping) and realizing high carrier density while…
Superconductivity in the topological non-trivial Dirac semimetal PdTe$_2$ was recently shown to be type-I. We here report measurements of the relative magnetic penetration depth, $ \Delta \lambda$, on several single crystals using a high…
As a wide bandgap semiconductor, diamond holds both excellent electrical and thermal properties, making it highly promising in the electrical industry. However, its hole mobility is relatively low and dramatically decreases with increasing…
Tungsten diselenide (WSe$_2$) is a promising p-type semiconductor limited by high contact resistance ($R_\textrm{C}$) and the lack of a reliable doping strategy. Here, we demonstrate that exposing WSe$_2$ to chloroform provides simple and…
The holographic approach to building the p-wave superconductors results in three different models: the Maxwell-vector, the SU(2) Yang-Mills and the helical. In the probe limit approximation, we analytically examine the properties of the…
In this work, we investigate the use of nanoscale polarization engineering to achieve efficient hole injection from metals to ultra-wide band gap AlGaN, and we show that UV-reflective aluminum (Al) layers can be used for hole injection into…
Tellurium (Te) is an intrinsically p-type doped narrow bandgap semiconductor with excellent electrical conductivity and low thermal conductivity. Bulk trigonal Te has been theoretically predicted and experimentally demonstrated to be an…
As silicon transistors scale toward future technology nodes, three-dimensional architectures -- including gate-all-around (GAA) nanoribbon and complementary field-effect transistors (CFETs) -- require channel widths in the tens of…
Elemental tellurium (Te) is a compelling van der Waals material due to its interesting chiral crystal structure and predicted topological properties. Here, we report the fabrication and comprehensive quantum transport study of devices based…
The large single crystals of SrSnP were prepared using Sn self-flux method. The superconductivity in the tetragonal SrSnP is observed with the critical temperature of ~2.3 K. The results of a crystallographic analysis, superconducting…
The possibility of p-wave pairing in superconductors has been proposed more than five decades ago, but has not yet been convincingly demonstrated. One difficulty is that some p-wave states are thermodynamically indistinguishable from…
High thermoelectric properties are associated with the phonon-glass electron-crystal paradigm. Conventional wisdom suggests that the optimal bandgap of semiconductor to achieve the largest power factor should be between 6 and 10 kbT. To…
A nanoscale device consisting of a metal nanowire, a dielectric, and a gate is proposed. A combination of quantum and thermal stochastic effects enable the device to have multiple functionalities, serving alternately as a transistor, a…
The band-to-band tunneling transistors have some performance advantages over the conventional MOSFETs due to the <60mV/dec sub-threshold slope. In this paper, carbon nanotubes are used as a model channel material to address issues that we…
Perovskite-based optoelectronic devices have shown great promise for solar conversion and other optoelectronic applications, but their long-term performance instability is regarded as a major obstacle to their widespread deployment.…
We report on fabrication of novel field-effect transistors (FETs) based on transition metal dichalcogenides. The unique structure of single crystals of these layered inorganic semiconductors enables fabrication of FETs with intrinsically…
${\beta}$-Ga${_2}$O${_3}$ based semiconductor devices are expected to have significantly improved high-power and high-temperature performance due to its ultra-wide bandgap of close to 5 eV. However, the high-temperature operation of these…
The search for large band gap systems with dissipationless edge states is essential to developing materials that function under a wide range of temperatures. Two-dimensional (2D) topological insulators (TIs) have recently attracted…
We report the fabrication and measurement of thermophotovoltaic (TPV) cells with efficiencies of >40%, which is a record high TPV efficiency and the first experimental demonstration of the efficiency of high-bandgap tandem TPV cells. TPV…
We show a hard induced superconducting gap in a Ge-Si nanowire Josephson transistor up to in-plane magnetic fields of $250$ mT, an important step towards creating and detecting Majorana zero modes in this system. A hard induced gap requires…