As the size of transistors shrinks and power density increases, thermal simulation has become an indispensable part of the device design procedure. However, existing works for advanced technology transistors use simplified empirical models to calculate effective thermal conductivity in the simulations. In this work, we present a dataset of size-dependent effective thermal conductivity with electron and phonon properties extracted from ab initio computations. Absolute in-plane and cross-plane thermal conductivity data of eight semiconducting materials (Si, Ge, GaN, AlN, 4H-SiC, GaAs, InAs, BAs) and four metallic materials (Al, W, TiN, Ti) with the characteristic length ranging from 5 to 50 nanometers have been provided. Besides the absolute value, normalized effective thermal conductivity is also given, in case it needs to be used with updated bulk thermal conductivity in the future. The dataset presented in this paper are openly available at https://doi.org/10.57760/sciencedb.j00113.00154.
@article{arxiv.2501.15736,
title = {An ab initio dataset of size-dependent effective thermal conductivity for advanced technology transistors},
author = {Han Xie and Ru Jia and Yonglin Xia and Lei Li and Yue Hu and Jiaxuan Xu and Yufei Sheng and Yuanyuan Wang and Hua Bao},
journal= {arXiv preprint arXiv:2501.15736},
year = {2025}
}