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The speed of integrated circuits is ultimately limited by the mobility of electrons or holes, which depend on the effective mass in a semiconductor. Here, building on an analogy with electromagnetic metamaterials and transformation optics,…
Guided by a comprehensive analysis of accumulation mode transistor physics and oxide semiconductor materials properties, we demonstrate an innovative oxide semiconductor transistor structure and process flow that break the constraint…
A whole class of two-color experiments involves intense, short Terahertz radiation pulses. A fast detector that is sensitive and able to resolve both near-infrared and Terahertz pulses at the same time is highly desirable. Here we present…
Scaling of transistors has enabled continuous improvements in logic device performance, especially through materials engineering. However, surpassing horizontal limitations in chip manufacturing requires a vertical, third dimension.…
Ferroelectric field-effect transistors employ a ferroelectric material as a gate insulator, the polarization state of which can be detected using the channel conductance of the device. As a result, the devices are of potential to use in…
Violet phosphorus (VP), the most stable phosphorus allotrope, is a van der Waals semiconductor that can be used to construct $\textit{p}$-type nanodevices. Recently, high-quality VP crystals have been synthesized while a deep insight into…
Whereas thermoelectric performance is normally limited by the figure of merit ZT, transverse thermoelectrics can achieve arbitrarily large temperature differences in a single leg even with inferior ZT by being geometrically tapered. We…
The temperature coefficient of resistance (TCR) is one of the most fundamental properties of a material. Semiconductor materials exhibiting high TCR are promising candidates for applications in high-resolution thermal imaging for autonomous…
We present results of electronic band structure, Fermi surface and electron transport properties calculations in orthorhombic $n$- and $p$-type SnSe, applying Korringa-Kohn-Rostoker method and Boltzmann transport approach. The analysis…
Perovskite indoor photovoltaics (PIPVs) are emerging as a transformative technology for low-light intensity energy harvesting, owing to their high power conversion efficiencies (PCEs), low-cost fabrication, solution-processability, and…
Two-dimensional materials have attracted lots of research interests due to the fantastic properties that are unique to the bulk counterparts. In this paper, from the state-of-the-art first-principles, we predicted the stable structure of…
Superconductors based on transition metal dichalcogenides are of substantial current relevance, towards attaining topological superconductivity. Here we report a detailed study on the synthesis and electromagnetic characterization of…
The $k \cdot p$ is a versatile technique that describes the semiconductor band structure in the vicinity of the bandgap. The technique can be extended to full Brillouin zone by including more coupled bands into consideration. For…
We synthesized the ferromagnetic EuAgP semiconductor and conducted a comprehensive study of its crystalline, magnetic, heat capacity, band gap, and magnetoresistance properties. Our investigation utilized a combination of X-ray diffraction,…
Deep submicron Al-AlOx-Nb tunnel junctions and single electron transistors with niobium islands were fabricated by electron beam gun shadow evaporation. Using stencil masks consisting of the thermostable polymer polyethersulfone (PES) and…
Heusler compounds with six valence electrons per atom have attracted interest as thermoelectric materials owing to their semimetallic and semiconducting properties. Here, we theoretically and experimentally investigate electronic transport…
We study the effect of torsional deformations on the electronic properties of single-walled transition metal dichalcogenide (TMD) nanotubes. In particular, considering forty-five select armchair and zigzag TMD nanotubes, we perform…
High drive current is a critical performance parameter in semiconductor devices for high-speed, low-power logic applications or high-efficiency, high-power, high-speed radio frequency (RF) analog applications. In this work, we demonstrate…
We demonstrate the measurement of p-channel silicon-on-insulator quantum dots at liquid helium temperatures by using a radio frequency (rf) reflectometry circuit comprising of two independently tunable GaAs varactors. This arrangement…
Semiconductor p-n junctions are essential building blocks for modern electronics and optoelectronics. In conventional semiconductors, a p-n junction produces depletion regions of free charge carriers at equilibrium and built-in potentials…