Related papers: Gain-Layer Project
The properties of 50 um thick Low Gain Avalanche Diode (LGAD) detectors manufactured by Hamamatsu photonics (HPK) and Fondazione Bruno Kessler (FBK) were tested before and after irradiation with 1 MeV neutrons. Their performance were…
Low Gain Avalanche Detectors (LGAD) represent a remarkable advance in high energy particle detection, since they provide a moderate increase (gain ~10) of the collected charge, thus leading to a notable improvement of the signal-to-noise…
Future high-energy physics experiments require a paradigm shift in radiation detector design. In response to this challenge, resistive LGADs that combine Low Gain Avalanche Diode technology with resistive readout have been developed. The…
In this paper, we report on the radiation resistance of 50-micron thick LGAD detectors manufactured at the Fondazione Bruno Kessler employing several different doping combinations of the gain layer. LGAD detectors with gain layer doping of…
The paper reports on the timing resolution achieved with Low-Gain Avalanche Diodes (LGADs), optimised for extreme-fluence conditions, at the DESY Test Beam Facility using 4~GeV/c electrons. The LGADs adopt an $n$-in-$p$ technology with a…
A new gain implant design has recently been introduced to enhance the radiation resistance of low-gain avalanche diodes (LGADs) to the extreme fluences anticipated in future hadron colliders like FCC-hh. This design utilises an engineered…
The High Granularity Timing Detector (HGTD) will be installed in the ATLAS experiment to mitigate pile-up effects during the High Luminosity (HL) phase of the Large Hadron Collider (LHC) at CERN. Low Gain Avalanche Detectors (LGADs) will…
The Low-Gain Avalanche Diode (LGAD) is a semiconductor detector capable of achieving excellent timing resolution (~20 ps) for minimum ionizing particles (MIPs). To realize a pixelated detector with both high timing precision and spatial…
Low-Gain Avalanche Diodes (LGADs) provide moderate internal gain and time resolutions of a few tens of picoseconds, making them a key technology for ultrafast timing in high-energy physics and beyond. However, both their gain and timing…
Low Gain Avalanche Diodes are prime candidates for high-resolution timing applications in High Energy Physics, Nuclear science, and several other fields. Operating these devices in high-radiation environments presents various hazards,…
Low Gain Avalanche Detectors (LGADs) are n-on-p silicon sensors with an extra p-layer below the collection electrode which provides signal amplification. When the primary electrons reach the amplification region new electron-hole pairs are…
Silicon sensors are the go-to technology for high-precision sensors in particle physics. But only recently low-noise silicon sensors with internal amplification became available. The so-called Low Gain Avalanche Detector (LGAD) sensors have…
This paper reports the last technological development on the Low Gain Avalanche Detector (LGAD) and introduces a new architecture of these detectors called inverse-LGAD (iLGAD). Both approaches are based on the standard Avalanche Photo…
Low Gain Avalanche Detectors (LGADs) are thin silicon detectors with moderate internal signal amplification and time resolution as good as 17 ps for minimum ionizing particles. However, the current major limiting factor in granularity is…
Low Gain Avalanche Detector (LGAD) technology has been used to design and construct prototypes of time-zero detector for experiments utilizing proton and pion beams with High Acceptance Di-Electron Spectrometer (HADES) at GSI Darmstadt,…
The Low-Gain Avalanche Diode (LGAD) is a new silicon detector and holds wide application prospects in particle physics experiments due to its excellent timing resolution. The LGAD with a pixel size of 1.3 mm $\times$ 1.3 mm was used to…
Low Gain Avalanche Detectors (LGADs) are silicon semiconductor sensors with an implanted thin p-doped multiplication layer that is designed to provide low gain. Most importantly, LGADs are specifically engineered to provide excellent…
The past ten years have seen the advent of silicon-based precise timing detectors for charged particle tracking. The underlying reason for this evolution is a design innovation: the Low-Gain Avalanche Diode (LGAD). In its simplicity, the…
We report precise TCAD simulations of IHEP-IME-v1 Low Gain Avalanche Diode (LGAD) calibrated by secondary ion mass spectroscopy (SIMS). Our setup allows us to evaluate the leakage current, capacitance, and breakdown voltage of LGAD, which…
We present the design and simulation of a 30 $\mathrm{\mu m}$ thick 4H-SiC Low Gain Avalanche Diode (LGAD) optimized for high-voltage operation. A 2.4 $\mathrm{\mu m}$ thick epitaxially grown gain layer enables controlled internal…