We report precise TCAD simulations of IHEP-IME-v1 Low Gain Avalanche Diode (LGAD) calibrated by secondary ion mass spectroscopy (SIMS). Our setup allows us to evaluate the leakage current, capacitance, and breakdown voltage of LGAD, which agree with measurements' results before irradiation. And we propose an improved LGAD Radiation Damage Model (LRDM) which combines local acceptor removal with global deep energy levels. The LRDM is applied to the IHEP-IME-v1 LGAD and able to predict the leakage current well at -30 ∘C after an irradiation fluence of Φeq=2.5×1015neq/cm2. The charge collection efficiency (CCE) is under development.
@article{arxiv.2106.15421,
title = {Leakage current simulations of Low Gain Avalanche Diode with improved Radiation Damage Modeling},
author = {Tao Yang and Kewei Wu and Mei Zhao and Xuewei Jia and Yuhang Tan and Suyu Xiao and Kai Liu and Xiyuan Zhang and Congcong Wang and Mengzhao Li and Yunyun Fan and Shuqi Li and Chengjun Yu and Han Cui and Hao Zeng and Mingjie Zhai and Shuiting Xin and Maoqiang Jing and Gangping Yan and Qionghua Zhai and Mingzheng Ding and Gaobo Xu and Huaxiang Yin and Gregor Kramberger and Zhijun Liang and João Guimarães da Costa and Xin Shi},
journal= {arXiv preprint arXiv:2106.15421},
year = {2022}
}