Related papers: Gain-Layer Project
The motivation for investigating the use of GaAs as a material for detecting particles in experiments for High Energy Physics (HEP) arose from its perceived resistance to radiation damage. This is a vital requirement for detector materials…
The detection of VUV scintillation light, e.g. in (liquid) argon detectors, commonly includes a reflector with a fluorescent coating, converting UV photons to visible light. The light yield of these detectors depends directly on the…
An irradiation campaign was conducted to provide guidance in the selection of materials and components for the radiation hardening of LED lights for use in CERN accelerator tunnels. This work describes the effects of gamma-rays on…
A new type of laser photodetachment (LPD) technique has been developed for the measurement of electron sheath thickness around an electrostatic probe and for the measurement of the length of collection region of photodetached electrons…
For the Phase-II Upgrade of the ATLAS detector at CERN, the current ATLAS Inner Detector will be replaced with the ATLAS Inner Tracker. The ATLAS Inner Tracker will be an all-silicon detector, consisting of a pixel tracker and a strip…
We describe a teaching-lab experiment that applies basic optical spectroscopy to examine the physics of semiconductor diode lasers. By using a low-power visible laser, this experiment is suitable for use in an open lab environment, where…
The timing measurement of charged particles using silicon detector is widely used in synchrotron source as X-ray detectors, in time-of-flight mass spectrometer and especially in large collider experiment. To reduce the drastically event…
We demonstrate anti-bunched emission from a lateral-light emitting diode. Sub-Poissonian emission statistic, with a g$^{(2)}$(0)=0.7, is achieved at cryogenic temperature in the pulsed low-current regime, by exploiting electron injection…
The investigation of two-level-state (TLS) loss in dielectric materials and interfaces remains at the forefront of materials research in superconducting quantum circuits. We demonstrate a method of TLS loss extraction of a thin film…
Light emitting diodes (LEDs) based on Gallium Nitride (GaN) have been revolutionizing various applications in lighting, displays, medical equipment, and other fields. However, their energy efficiency is still below expectations in many…
Semiconductor detectors in general have a dead layer at their surfaces that is either a result of natural or induced passivation, or is formed during the process of making a contact. Charged particles passing through this region produce…
We present high-reflectivity substrate-transferred single-crystal GaAs/AlGaAs interference coatings at a center wavelength of 4.54 um with record-low excess optical loss below 10 parts per million. These high-performance mirrors are…
Future hadron collider experiments will require sensing materials that withstand stronger radiation fields. Therefore, either a frequent replacement of detectors, a significant increase in radiation hardness of Silicon, or a shift to…
Recent interest in pile-up mitigation through fast timing at the HL-LHC has focused attention on technologies that now achieve minimum ionising particle (MIP) time resolution of 30 picoseconds or less. The constraints of technical maturity…
We at RRCAT have recently developed high power laser diodes in the wavelength range of 740 to 1000 nm. A typical semiconductor laser structure is consisted of about 10 epilayers with different composition, thickness and doping values. For…
The doping of semiconductor materials is a fundamental part of modern technology, but the classical approaches have in many cases reached their limits both in regard to achievable charge carrier density, as well as mobility. Modulation…
In this work, the effects of $^\text{60}$Co $\gamma$-ray irradiation on high resistivity $p$-type diodes have been investigated. The diodes were exposed to dose values of 0.1, 0.2, 1, and \SI{2}{\mega Gy}. Both macroscopic ($I$--$V$,…
This paper presents the principles of operation of Resistive AC-Coupled Silicon Detectors (RSDs) and measurements of the temporal and spatial resolutions using a combined analysis of laser and beam test data. RSDs are a new type of n-in-p…
$\beta$-Ga$_2$O$_3$ is a next-generation ultra wide bandgap semiconductor (E$_g$ = 4.8 eV to 4.9 eV) that can be homoepitaxially grown on commercial substrates, enabling next-generation power electronic devices among other important…
The Gas Pixel Detector (GPD) is a new generation device which, thanks to its 50 um pixels, is capable of imaging the photoelectrons tracks produced by photoelectric absorption in a gas. Since the direction of emission of the photoelectrons…