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We report an optically gated transistor composed of CdSe nanocrystals (NCs), sensitized with the dye Zinc beta-tetraaminophthalocyanine for operation in the first telecom window. This device shows a high ON/OFF ratio of six orders of…
Two-dimensional materials (2DMs) meet the demand of broadband and low-cost photodetection on silicon for many applications. Currently, it is still very challenging to realize excellent silicon-2DM PDs. Here we demonstrate…
The Fermi surface anisotropy of a pseudo-gap in the spectral weight, caused by superconducting fluctuations or anti-ferromagnetic fluctuations, is calculated for a tight binding band. The importance of the Fermi surface saddle point, or hot…
We report on experimental investigations of an electrically driven WSe2 based light-emitting van der Waals heterostructure. We observe a threshold voltage for electroluminescence significantly lower than the corresponding single particle…
By eliminating normal fabrication processes, we preserve the bulk insulating state of calcium-doped Bi2Se3 single crystals in suspended nanodevices, as indicated by the activated temperature dependence of the resistivity at low…
Achieving high crystalline quality Ge$_{1-x}$Sn$_{x}$ semiconductors at Sn content exceeding 10\% is quintessential to implementing the long sought-after silicon-compatible mid-infrared photonics. Herein, by using sub-20 nm Ge nanowires as…
Optical phase shifters are extensively used in integrated optics not only for telecom and datacom applications, but also for sensors and quantum computing. While various active solutions have been demonstrated, progress in passive phase…
The 21-cm absorption feature reported by the EDGES collaboration is several times stronger than that predicted by traditional astrophysical models. If genuine, a deeper absorption may lead to stronger fluctuations on the 21-cm signal on…
Photodetectors based on nano-structured superconducting thin films are currently some of the most sensitive quantum sensors and are key enabling technologies in such broad areas as quantum information, quantum computation and…
We have measured the reflectivity of the optimally doped Ca$_{8.5}$La$_{1.5}$(Pt$_3$As$_8$)(Fe$_{10}$As$_{10}$) single crystal ($T_c$ = 32.8K) over the broad frequency range from 40 to 12000 $cm^{-1}$ and for temperatures from 8 to 300 K.…
We report the synthesis of alpha-Fe1.4Ga0.6O3 compound and present its structural phase stability and interesting magnetic, dielectric and photo-absorption properties. In our work Ga doped alpha-Fe2O3 samples are well stabilized in alpha…
The superconducting diode effect has been recently reported in a variety of systems and different symmetry breaking mechanisms have been examined. However, the frequency range of these potentially important devices still remains obscure. We…
A reconfigurable millimeter-wave artificial waveguide using glide-symmetric pin-like contact-less metasurfaces is proposed in order to enable low loss and high-power-handling capability in switching operations. Thanks to the remarkable…
Device based on GaN have great potential for high power switching applications due to its high breakdown field and high electron mobility. In this work, we present the device design of a vertical GaN-on-GaN PN power diode using high…
Micromegas technology is a promising candidate to replace Atlas forward muon chambers -tracking and trigger- for future HL-LHC upgrade of the experiment. The increase on background and pile-up event probability requires detector…
We use time- and angle-resolved photoemission spectroscopy (TR-ARPES) combined with density functional theory to investigate ultrafast carrier dynamics in low-symmetry layered semiconducting PdSe$_2$. The indirect bandgap is determined to…
As hyperscale and co-located data centers scale, the electric grid sees an increase in large, voltage-sensitive IT loads with these data center plant size ranging between 500 MW to 2 GW. A sudden loss of these loads as they switch to onsite…
We demonstrate experimentally the realization and the characterization of a chip scale integrated photodetector for the visible and the near infrared spectral regime based on the integration of a MoSe2/WS2 heterojunction on top of a silicon…
Recently, two-dimensional materials and in particular transition metal dichalcogenides (TMDs) were extensively studied because of their strong light-matter interaction and the remarkable optoelectronic response of their field-effect…
Piezoelectric optomechanical platforms present one of the most promising routes towards efficient transduction of signals from the microwave to the optical frequency domains. New device architectures need to be developed in order to achieve…