Related papers: Record Responsivity-conductance Performance in Sub…

We investigate the structural, electronic, vibrational, power and transport properties of the $\beta$ allotrope of Ga$_2$O$_3$ from first-principles. We find phonon frequencies and elastic constants that reproduce the correct band ordering,…

We report the discovery of superconductivity in Nb$_3$Pd$_{x}$Se$_7$ with a $x$-dependent superconducting transition-temperature as high as $T_c \simeq 2.1 $ K for $x \simeq0.7$ (middle point of the resistive transition). Needle-like single…

In this study, we grow FeSe/SrTiO$_{3}$ with thicknesses of 4-19 nm using pulsed laser deposition and investigate their magneto-transport properties. The thinnest film (4 nm) exhibit negative Hall effect, indicating electron transfer into…

Superconductivity often emerges in proximity of other symmetry-breaking ground states, such as antiferromagnetism or charge-density-wave (CDW) order. However, the subtle inter-relation of these phases remains poorly understood, and in some…

Semiconductor superlattices have found widespread applications in electronic industries. In this work, short-period superlattice structure (SLs) composed of CdO and MgO layers was grown using the plasma-assisted molecular beam epitaxy…

$\beta$-Ga$_{2}$O$_{3}$ nanomembranes, obtained by ion-beam-assisted exfoliation, are used in the fabrication of simple metal-semiconductor-metal (MSM) structures, that are tested as photodetectors (PD) and field-effect transistors (FET).…

Enhancing power efficiency and performance in neuromorphic computing systems is critical for next-generation artificial intelligence applications. We propose the Nanoscale Side-contacted Field Effect Diode (S-FED), a novel solution that…

We investigate the effects of alloying and growth orientation on the properties of the ultra-wide bandgap semiconductor \beta-Ga2O3 and pseudomorphic AlGaO alloy heterojunctions. Band offsets are computed from first principles using density…

A fast silicon-graphene hybrid plasmonic waveguide photodetectors beyond 1.55 {\mu}m is proposed and realized by introducing an ultra-thin wide silicon-on-insulator ridge core region with a narrow metal cap. With this novel design, the…

We performed high-pressure transport studies on the flat-band Kagome compounds, Pd$_3$P$_2$(S$_{1-x}$Se$_x$)$_8$ ($x$ = 0, 0.25), with a diamond anvil cell. For both compounds, the resistivity exhibits an insulating behavior with pressure…

Due to the lack of effective p-type doping in GaN and the adverse effects of surface band-bending of GaN on electron transport, developing practical GaN heterojunction bipolar transistors has been impossible. The recently demonstrated…

We measured the optical conductivity of superconducting single crystals of Ba$_{1-x}$K$_{x}$Fe$_{2}$As$_{2}$ with $x$ ranging from 0.40 (optimal doping, $T_c = 39$ K) down to 0.20 (underdoped, $T_c = 16$ K), where a magnetic order coexists…

Wide-band-gap insulators such as NiO offer the exciting prospect of coherently manipulating electronic correlations with strong optical fields. Contrary to metals where rapid dephasing of optical excitation via electronic processes occurs,…

We demonstrate over 3 kV gate-pad-connected field plated (GPFP) $\beta$-Ga$_2$O$_3$ lateral MESFETs with high lateral figure of merit (LFOM) using metalorganic vapor phase epitaxy (MOVPE) grown channel layers and regrown ohmic contact…

Engineering nanoscale light matter interaction in mixed dimensional semiconductor heterostructures offers a pathway to mitigate the intrinsic gain bandwidth trade off in photodetectors. Here, we report a broadband, high responsivity 2D and…

$\beta$-Ga$_2$O$_3$ is a leading ultra-wide band gap semiconductor, but its performance depends on precise control over dopant incorporation and stability. In this work, we use first-principles calculations to systematically assess the…

Recent measurements have shown that a continuously tunable bandgap of up to 250 meV can be generated in biased bilayer graphene [Y. Zhang et al., Nature 459, 820 (2009)], opening up pathway for possible graphene-based nanoelectronic and…

Low-Gain Avalanche Diode (LGAD) sensor is one of candidate sensors for the tracker at future hadron collider experiments. To use this sensor as a tracking detector, AC-LGAD sensor is being developed which has both timing and spatial…

This paper presents vertical (001) oriented $\beta$-Ga$_2$O$_3$ field plated (FP) Schottky barrier diode (SBD) with a novel extreme permittivity dielectric field oxide. A thin drift layer of 1.7 $\mu m$ was used to enable a punch-through…

Graphene is of interest in the development of next-generation electronics due to its high electron mobility, flexibility and stability. However, graphene transistors have poor on/off current ratios because of the absence of a bandgap. One…