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We report on the nonequilibrium dynamics of the electronic structure of the layered semiconductor Ta$_2$NiSe$_5$ investigated by time- and angle-resolved photoelectron spectroscopy. We show that below the critical excitation density of…

Supercontinuum generation (SCG) is an important nonlinear optical process enabling broadband light sources for many applications, for which silicon nitride(Si3N4) has emerged as a leading on-chip platform.To achieve suitable group velocity…

Deep understanding of plasmonic nanoparticles (PNPs)-light interaction over semiconductors surface shows great promises in enhancing their optoelectronic devices efficiency beyond the conventional limit. However, PNP-light interaction…

Beta-Ga2O3 has emerged as a promising candidate for electronic device applications because of its ultra-wide bandgap, high breakdown electric field, and large-area affordable substrates grown from the melt. However, its thermal conductivity…

In this report, we demonstrate high spectral responsivity (SR) in MBE grown epitaxial \b{eta}-Ga2O3-based solar blind MSM photodetectors (PD). (-2 0 1)-oriented \b{eta}-Ga2O3 thin film was grown by plasma-assisted MBE on c-plane sapphire…

The $\beta$-Ga$_2$O$_3$ has exceptional electronic properties with vast potential in power and RF electronics. Despite the excellent demonstrations of high-performance unipolar devices, the lack of p-type doping in $\beta$-Ga$_2$O$_3$ has…

Gas sensors based on transition metal dichalcogenides (TMDCs) have attracted much attention from a new perspective involving light-assisted or gate-voltage operation. However, their combined roles as regards the gas sensing performance and…

The performance of n-type amorphous oxide semiconductor thin-film transistors (TFTs) is largely controlled by the density of states (DoS) near the conduction band mobility edge. Here, the full subgap DoS of amorphous InGaZnO (a-IGZO) TFTs,…

BiFeO3 thin films have been grown on Pt/Ti/SiO2/Si substrates with pulsed laser deposition using Au as the top electrode. The resistive switching property of the Au/BiFeO3/Pt stack has been significantly improved by carefully tuning the…

We have fabricated black phosphorus photodetectors and characterized their full spectral responsivity. These devices, which are effectively in the bulk thin film limit, show broadband responsivity ranging from <400 nm to the ~3.8 $\mu$m…

We have carried out high-field resistivity measurements up to 27\,T in EuFe$_2$As$_2$ at $P$\,=\,2.5\,GPa, a virtually optimal pressure for the $P$-induced superconductivity, where $T_\mathrm{c}$\,=\,30\,K. The $B_\mathrm{c2}-T_\mathrm{c}$…

We report design of a high static performance on-off optical switch using nanoscale phase change material Ge2Sb2Te5 embedded into silicon-on-insulator waveguide. This active material can be switched between amorphous and crystalline states…

$\beta$-Ga$_2$O$_3$ is a semiconductor with bandgap in the deep-UV ~ 5 eV. Due to its strong phonon-hole coupling, holes are self-trapped inhibiting bandgap luminescence at the deep-UV. In contrast, the self-trapped holes (STH) can exhibit…

Hybrid heterostructure based phototransistors are attractive owing to their high gain induced by photogating effect. However, the absence of an in-plane built-in electric field in the single channel layer transistor results in a relatively…

This work is devoted to the analysis of the performance of energy detection based spectrum sensing in the presence of enriched fading conditions which are distinct for the large number of multipath components and the lack of a dominant…

An optoelectronic optimization was carried out for an AlGaAs solar cell containing (i) an n-AlGaAs absorber layer with a graded bandgap and (ii) a periodically corrugated Ag backreflector combined with localized ohmic Pd-Ge-Au backcontacts.…

To expand the QUEST database of highly-accurate vertical transition energies, we consider a series of large organic chromogens ubiquitous in dye chemistry, such as anthraquinone, azobenzene, BODIPY, and naphthalimide. We compute, at the CC3…

The bowing of the energy of the three lowest band-to-band transitions in $\beta$-(Al$_{x}$Ga$_{1-x}$)$_2$O$_3$ alloys was resolved using a combined density functional theory (DFT) and generalized spectroscopic ellipsometry (GSE) approach.…

The accelerating demand for wireless communication necessitates wideband, energy-efficient photonic sub-terahertz (sub-THz) sources to enable ultra-fast data transfer. However, as critical components for THz photonic mixing, photodiodes…

Antiferroelectric (AFE) materials have received tremendous attention owing to their high energy conversion efficiency and good tunability. Recently, an exotic two-dimensional (2D) AFE material, $\beta'-\mathrm{In}_{2}\mathrm{Se}_{3}$…