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Beta phase gallium oxides, an ultrawide-bandgap semiconductor, has great potential for future power and RF electronics applications but faces challenges in bipolar device applications due to the lack of p-type dopants. In this work, we…
Traditionally, advancements in semiconductor devices have been driven by lattice-matched heterojunctions with tailored band alignments through heteroepitaxy techniques. However, there is significant interest in expanding the capabilities of…
We report on a thorough optical investigation over a broad spectral range and as a function of temperature of the charge dynamics in Ba(Co$_x$Fe$_{1-x}$)$_2$As$_2$ compounds for Co-doping ranging between 0 and 18%. For the parent compound…
High gain photoconductive devices find wide spread applications in low intensity light detection. Ultra-thin layered materials have recently attracted a lot of attention from researchers in this regard. However, in general, a large…
Beta-phase Ga2O3 has emerged as a promising candidate for a wide range of device applications, including power electronic devices, radio-frequency devices and solar-blind photodetectors. The wide bandgap energy and the predicted high…
Recent progress in manufacturing high-electron-mobility transistors and optoelectronic devices highlights the necessity of understanding the charge dynamics and its impact on the optical properties inside heterostructures. Herein, we study…
We measured the THz reflectance properties of a high quality epitaxial thin film of the Fe-based superconductor BaFe$_{1.84}$Co$_{0.16}$As$_2$ with T$_c$=22.5 K. The film was grown by pulsed laser deposition on a DyScO$_3$ substrate with an…
Ta$_{3}$N$_{5}$ is among the most intensively studied photoanode materials for solar-driven water oxidation, yet its performance often remains limited by short carrier lifetimes and defect mediated recombination. Although transient…
Superconducting properties were studied on high quality superconductors $Ba_{x}(NH_{3})Fe_{2}Se_{2}$ ($T_{c}$ = 39 K) and $Sr_{x}(NH_{3})Fe_{2}Se_{2}$ ($T_{c}$ = 44 K) prepared by intercalating Ba/Sr atoms into tetragonal $\beta$-FeSe by…
A first-principles study on the quasiparticles energy and optical absorption spectrum of fluorographene is presented by employing the GW + Bethe-Salpeter Equation (BSE) method with many-electron effects included. The calculated band gap is…
Angle resolved photoemission (ARPES) data from the electron doped cuprate superconductor Sm$_{1.86}$Ce$_{0.14}$CuO$_4$ shows a much stronger pseudo-gap or "hot-spot" effect than that observed in other optimally doped $n$-type cuprates.…
The increasing demand for high-voltage and high-power electronic applications has intensified the search for novel ultrawide bandgap (UWB) semiconductors. Alkaline earth stannates possess wide band gaps and exhibit the highest…
n-Ga2O3/p-GaN heterojunction based photodetector devices are fabricated on Si-doped (-201) \beta-Ga2O3 epitaxial layers grown by pulsed laser deposition (PLD) technique on p-type c-GaN/sapphire templates. These devices demonstrate the…
The development of integrated photonic circuits utilizing gallium phosphide requires a robust, scalable process for fabrication of GaP-on-insulator devices. Here we present the first GaP photonic devices on SiO$_2$. The process exploits…
Ultrawide bandgap semiconductor gallium oxide (Ga2O3) and its polymorphs have recently attracted increasing attention across physics, materials science, and electronics communities. In particular, the self-organized formation of the…
Based on a single band Hubbard model and the fluctuation exchange approximation, the effective mass and the energy band renormalization in Na$_{0.33}$CoO$_2$ is elaborated. The renormalization is observed to exhibit certain kind of…
We present inverted metamorphic Ga0.3In0.7As photovoltaic converters with sub-0.60 eV bandgaps grown on InP and GaAs substrates. The compositionally graded buffers in these devices have threading dislocation densities of 1.3x10^6 cm^-2 and…
NanoSQUIDs are quantum sensors that excel in detecting a small change in magnetic flux with high sensitivity and high spatial resolution. Here, we employ resist-free direct-write Ga+ Focused Ion Beam Induced Deposition (FIBID) techniques to…
We demonstrate the post-induction of high-quality microcavity on silicon photonic crystal (PC) waveguide by integrating few-layer GaSe crystal, which promises highly efficient on-chip optical frequency conversions. The integration of GaSe…
We report on the growth optimization of intentionally low-doped ($10^{15}$ $cm^{-3}$) high-quality $\beta-Ga_2O_3$ drift layers up to 10 $\mu m$ thick via MOCVD and the fabrication of kilovolt-class field plated Schottky barrier diodes on…