Related papers: Record Responsivity-conductance Performance in Sub…
An optical "pseudogap" is usually assumed to open at low T in the "anomalous Drude" absorption, which models the optical conductivity sigma(omega) (proportional to omega-1) of HCTS by a linewidth Gamma (on the order of 1000 cm-1) varying…
High-performance p-channel transistors are crucial to implementing efficient complementary circuits in wide-bandgap electronics, but progress on such devices has lagged far behind their powerful electron-based counterparts due to the…
Atomic-scale ferroelectric thin films hold great promise for high-density, low-power applications but face stability and voltage scaling challenges at extreme thinness. Here, we demonstrate ferroelectricity in single-crystalline…
Beta-phase gallium oxide ($\beta$-Ga$_2$O$_3$) research has gained accelerated pace due to its superiorly large bandgap and commercial availability of large-diameter native substrates. However, the high acceptor activation energy obstructs…
By means of first-principles calculations within the density functional theory, we study the structural and optical properties of codoped ZnO nanowires and compare them with those of the bulk and film. It is disclosed that the low…
We have experimentally demonstrated the effectiveness of beta-gallium oxide (beta-Ga2O3) ferroelectric fin field-effect transistors (Fe-FinFETs) for the first time. Atomic layer deposited (ALD) hafnium zirconium oxide (HZO) is used as the…
Photoelectrocatalytic (PEC) reduction of N2 to ammonia (NH3) is emerging as the potential alternative to overcome the standard Haber-Bosch approach. In this communication, solar N2 reduction was demonstrated with molybdenum carbide (Mo2C)…
This work theoretically explores a spectrally selective TPV cell based on an asymmetric Fabry-Perot resonance cavity structure with sub-100-nm GaSb layer. The simulated spectral property of the ultrathin nanophotonic cell structure exhibits…
Herein, we present a detailed study of the structural, optical, and electrochemical responses of Gd$_2$O$_3$ doped with nickel zinc ferrite nanoparticles. Doping of Ni$_{0.5}$Zn$_{0.5}$Fe$_2$O$_4$ nanoparticles to Gd$_2$O$_3$ powder was…
Semiconducting oxides with reducible cations are ideal platforms for various functional applications in nanoelectronics and catalysts. Here we report an ultrathin monolayer alpha-MoO3 where tunable electronic properties and different gas…
Anisotropies of electrical resistivity, upper critical field, London penetration depth and critical currents have been measured in single crystals of the optimally doped iron pnictide superconductor Ba(Fe$_{1-x}$Co$_x$)$_2$As$_2$, $x$=0.074…
We stabilize resistance of melt-quenched amorphous Ge2Sb2Te5 (a-GST) phase change memory (PCM) line cells by substantially accelerating resistance drift and bringing it to a stop within a few minutes with application of high electric field…
Phase Resolved Optical Emission Spectroscopy (PROES) measurements combined with 1d3v Particle-in-Cell/Monte Carlo Collision (PIC/MCC) simulations are performed to investigate the excitation dynamics in low-pressure capacitively coupled…
The physics of strongly correlated materials is deeply rooted in electron interactions and their coupling to low-energy excitations. Unraveling the competing and cooperative nature of these interactions is crucial for connecting microscopic…
${\beta}$-LiGaO$_2$ with an orthorhombic wurtzite-derived structure is a candidate ultrawide direct-bandgap semiconductor. In this work, using the non-adiabatic Allen-Heine-Cardona approach, we investigate the bandgap renormalization…
We report on the anisotropic response, the charge and lattice dynamics of normal and charge-ordered phases with horizontal stripes in single crystals of the organic conductor alpha-(BEDT-TTF)2I3 determined by dc resistivity, dielectric and…
We performed point-contact Andreev reflection spectroscopy measurements in Ca(Fe_{1-x}Co_x)2As2 single crystals with effective x=0.060 +- 0.005. The spectra of ab-plane contacts show a zero-bias maximum and broad shoulders at about 5-6 meV.…
Field-plated (FP) depletion-mode MOVPE-grown $\beta$-Ga$_2$O$_3$ lateral MESFETs are realized with superior reverse breakdown voltages and ON currents. A sandwiched SiN$_x$ dielectric field plate design was utilized that prevents…
In this letter, we report on high performance depletion/enhancement (D/E)-mode beta-Ga2O3 on insulator (GOOI) field-effect transistors (FETs) with record high drain currents (ID) of 600/450 mA/mm, which are nearly one order of magnitude…
We systematically investigate the electronic structures of pristine monolayer WSe$_2$ and WSe$_2$ superlattices with periodic nitrogen substitution. Unlike random doping, which often introduces in-gap impurity states, periodic nitrogen…