Related papers: Theoretical and experimental development of a high…
In this work we present silicon process compatible, stable and reliable ($>10^{8}$cycles), high non-linearity ratio at half-read voltage ($>5\times 10^{5}$), high speed ($<60ns$) low operating voltage ($<2V$) back-to-back Schottky diodes.…
In this paper, we present experimental results and simulation data of an electrostatically doped and therefore voltage-programmable, planar, CMOS-compatible field-effect transistor (FET) structure. This planar device is based on our…
Efficient and compact frequency converters are essential for frequency stabilization of terahertz sources. In this paper, we present a 3.5-THz, x6-harmonic, integrated Schottky diode mixer operating at room temperature. The designed…
Wavelength division multiplexers are fundamental to the functioning and performance of integrated photonic circuits, with applications ranging from optical interconnects to sensing and quantum technologies. Current solutions are limited by…
This paper discusses a linear programming approach for designing switching signals for controlled rectifiers to achieve a low input current & output voltage total harmonic distortions. The focus here is on fully controlled rectifiers made…
One of the challenges faced by optical platforms for quantum technologies is the implementation of (ultimately) a transistor. The functionality that is hard to achieve is rectification: having the beam propagating in one direction…
This letter presents a 360{\deg} phase detector cell for performing phase-shift measurements on multiple output systems. An analog phase detector, capable of detecting a maximum range of {\pm}90{\deg}, has been used to perform a double…
Far-field Wireless Power Transfer (WPT) has attracted significant attention in the last decade. Recently, channel-adaptive waveforms have been shown to significantly increase the DC power level at the output of the rectifier. However the…
Ga2O3 Schottky barrier diodes featuring a field plate and a composite SiO2/SiNx dielectric layer beneath the field plate were fabricated, achieving a breakdown voltage of 2.4 kV at room temperature. Electrical performance and degradation…
Triode reflex geometry vircator operating within 3.0 - 4.2 GHz range with efficiency up to 6% is developed and experimentally investigated. Shiftable reflectors are shown to enable frequency tuning and output power control. Radiation…
We have built a vacuum double crystal spectrometer, which coupled to an electron-cyclotron resonance ion source, allows to measure low-energy x-ray transitions in highly-charged ions with accuracies of the order of a few parts per million.…
A physical system connected to two thermal reservoirs at different temperatures is said to act as a heat rectifier when it is able to bias the heat current in a given direction, similarly to an electronic diode. We propose to quantify the…
Two-dimensional material (2DM)-based field-effect transistors (FETs), such as molybdenum disulfide (MoS${_2}$)-FETs, have gained significant attention for their potential for ultra-short channels, thereby extending Moore's law. However,…
An experimentally-calibrated carbon nanotube compact transistor model has been used here to design two high-frequency (HF) circuits with two different functionalities each: a phase configurable amplifier (PCA) and a frequency configurable…
This study focuses on optimizing the design parameters of a Dual Active Bridge (DAB) converter for use in 350 kW DC fast chargers, emphasizing the balance between efficiency and cost. Addressing the observed gaps in existing high-power…
We investigated a mechanism of rectification in di-block oligomer diode molecules that have recently been synthesized and showed a pronounced asymmetry in the measured I-V spectrum. The observed rectification effect is due to the resonant…
Heat flow control is essential for widespread applications of heating, cooling, energy conversion and utilization. Here we demonstrate the first observation of temperature-gated thermal rectification in vanadium dioxide beams, in which an…
Rectification properties of semiconductor p-n junction diodes are the basic and important characteristics for electronic device evaluation, especially for novel semiconductor materials. Today's semiconductor devices' fabrication and…
As transistor footprint scales down to sub-10 nm regime, the process development for advancing to further technology nodes has encountered slowdowns. Achieving greater functionality within a single chip requires concurrent development at…
This letter investigates the uplink of a multi-user millimeter wave (mmWave) system, where the base station (BS) is equipped with a massive multiple-input multiple-output (MIMO) array and resolution-adaptive analog-to-digital converters…