Related papers: A topological field-effect memristor
We investigate magnetotransport in exfoliated nanostructures of the candidate magnetic 3D topological insulator $\mathrm{EuSn_{2}As_{2}}$. Similar to macroscopic single crystals, the negative magnetoresistance observed below the N\'eel…
We consider magnetotransport in a disordered two-dimensional electron gas in the presence of a periodic modulation in one direction. Existing quasiclassical and quantum approaches to this problem account for Weiss oscillations in the…
We study transport properties and topological phase transition in two-dimensional interacting disordered systems. Within dynamical mean-field theory, we derive the Hall conductance, which is quantized and serves as a topological invariant…
Recent advances in manipulation of orbital angular momentum (OAM) within the paradigm of orbitronics present a promising avenue for the design of future electronic devices. In this context, the recently observed orbital Hall effect (OHE)…
The mutual interplay between electron transport and magnetism has attracted considerable attention in recent years, primarily motivated by strategies to manipulate magnetic degrees of freedom electrically, such as spin-orbit torques and…
Despite the broadband response, limited optical absorption at a particular wavelength hinders the development of optoelectronics based on Dirac fermions. Heterostructures of graphene and various semiconductors have been explored for this…
More than 30 years ago, Thouless introduced the concept of a topological charge pump that would enable the robust transport of charge through an adiabatic cyclic evolution of the underlying Hamiltonian. In contrast to classical transport,…
We propose a spintronics-based hardware implementation of neuromorphic computing, specifically, the spiking neural network, using topological winding textures in one-dimensional antiferromagnets. The consistency of such a network is…
In Valence Change Memory (VCM) cells, the conductance of an insulating switching layer is reversibly modulated by creating and redistributing point defects under an external field. Accurate simulations of the switching dynamics of these…
The quantized version of anomalous Hall effect realized in magnetic topological insulators (MTIs) has great potential for the development of topological quantum physics and low-power electronic/spintronic applications. To enable…
Continued progress in high speed computing depends on breakthroughs in both materials synthesis and device architectures. The performance of logic and memory can be enhanced significantly by introducing a memristor, a two terminal device…
The modulation of topological electronic states by an external magnetic field is highly desired for condensed matter physics. Schemes to achieve this have been proposed theoretically, but few can be realized experimentally. Here, combining…
3D topological insulators are characterized by an insulating bulk and extended surface states exhibiting a helical spin texture. In this work, we investigate the hyperfine interaction between the spin-charge coupled transport of electrons…
Two-dimensional systems with honeycomb lattice are known to be a paradigmatic platform to explore the various types of Hall effects, owing to that the interplay of lattice geometry, spin-orbit coupling and magnetism can give rise to very…
Quantum transport measurements are performed in gate-defined, high-quality, two-dimensional hole and electron systems in an undoped InSb quantum well. For both polarities, the carrier systems show tunable spin-orbit interaction as extracted…
Topological phases of electrons such as topological insulators and quantum Hall states typically require strong spin-orbit coupling or magnetic fields. In this study, we consider an electron system coupled to a spin system, where electrons…
The quantum anomalous Hall effect in magnetic topological insulators has been recognized as a promising platform for applications in quantum metrology. The primary reason for this is the electronic conductance quantization at zero external…
As a new quantum state, topological insulators have become the focus of condensed matter and material science. The open system research of topological insulators has aroused the interest of many researchers. Recently, many aspects,…
Using self-consistent quantum transport simulation on realistic devices, we show that InAs band-to-band Tunneling Field Effect Transistors (TFET) with a heavily doped pocket in the gate-source overlap region can offer larger ON current and…
As a possible physical realization of a quantum information processor, a system with stacked self-assembled InAs quantum dots buried in GaAs in adjacent to the channel of a spin field-effect transistor has been proposed. In this system,…