We investigate magnetotransport in exfoliated nanostructures of the candidate magnetic 3D topological insulator EuSn2As2. Similar to macroscopic single crystals, the negative magnetoresistance observed below the N\'eel temperature (TN = 24 K) is related to the canted antiferromagnetic state (CAF) of an easy-plane antiferromagnet (AFM), with an increase of the saturation field when tilting the applied magnetic field away from the (ab) plane (μ0Hsc = 4.9 T, μ0Hsab = 3.6 T). Higher-accuracy measurements in nanostructures up to 14 T further evidence a non-linear normal Hall response due to several electronic bands. Interestingly, the transverse resistance due to magnetism reveals an anomalous Hall effect in the CAF state, but also a topological Hall effect due to chiral spin textures, as found in AFM or helical magnets. The presence of real-space chiral spin texture, already reported in another magnetic topological insulator, MnBi2Te4, could be a characteristic generally appearing in magnetic 3D topological insulators.
@article{arxiv.2603.15277,
title = {Anomalous and Topological Hall Effects in Antiferromagnetic EuSn2As2 Nanostructures},
author = {Evgeny I. Maltsev and Nicolas Pérez and Romain Giraud and Kranthi Kumar Bestha and Anja U. B. Wolter and Joseph Dufouleur and Kirill S. Pervakov and Vladimir M. Pudalov and Kornelius Nielsch and Bernd Büchner and Louis Veyrat},
journal= {arXiv preprint arXiv:2603.15277},
year = {2026}
}