Related papers: A topological field-effect memristor
Topological states of quantum matter have inspired both fascinating physics findings and exciting opportunities for applications. Due to the over-complicated structure of, as well as interactions between, real materials, a faithful quantum…
The field of topological insulators (TIs) is rapidly growing. Concerning possible applications, the search for materials with an easily controllable TI phase is a key issue. The quantum spin Hall effect, characterized by a single pair of…
We investigate the electronic and transport properties of topological and trivial InAs$_{1-x}$Bi$_x$ quantum dots (QDs). By considering the rapid band gap change within valence band anticrossing theory for InAs$_{1-x}$Bi$_x$, we predicted…
We establish a unified, symmetry-driven framework that combines the alternating spin splitting of altermagnets with valley topology to realize and electrically interconvert helical and chiral topological phases within a single material…
Topological aspects represent currently a boosting area in condensed matter physics. Yet there are very few suggestions for technical applications of topological phenomena. Still, the most important is the calibration of resistance…
We show that the tunable gate voltage in n-doped AlGaAs/GaAs QW (quantum well) is a key in designing an efficient and ultrafast MRAM (magnetoresistive random access memory). The Rashba spin-orbit coupling in such QWs can be tuned…
Controlling magnetic order in magnetic topological insulators (MTIs) is a key to developing spintronic applications with MTIs, and is commonly achieved by changing the magnetic doping concentration, which inevitably affects…
The magnetic topological materials have attracted significant attention due to their potential realization of variety of novel quantum phenomena. EuIn$_2$As$_2$ has recently been theoretically recognized as a long awaited intrinsic…
Quantum Hall phases have recently emerged as a platform to investigate non-Hermitian topology in condensed-matter systems. This platform is particularly interesting due to its tunability, which allows to modify the properties and topology…
Candidate systems for topologically-protected qubits include two-dimensional electron gases (2DEGs) based on heterostructures exhibiting a strong spin-orbit interaction (SOI) and superconductivity via the proximity effect. For InAs- or…
Recently, antiferromagnetic (AF) materials have attracted rapid attention, because they are considered as outstanding candidates to replace the widely used ferromagnets in the next generation of spintronics. We propose a magnetoresistance…
Topological insulators are characterized by a nontrivial band topology driven by the spin-orbit coupling. To fully explore the fundamental science and application of topological insulators, material realization is indispensable. Here we…
We present topological insulator (TI)-based single-electron transistors (SETs) as magnetic-field-compatible charge sensing devices that are easily integrable with TI-superconductor hybrid platforms. We observe well-resolved Coulomb diamonds…
Topological symmetries, invertible and otherwise, play a fundamental role in the investigation of quantum field theories. Despite their ubiquitous importance across a multitude of disciplines ranging from string theory to condensed matter…
We give field theory descriptions of the time-reversal invariant quantum spin Hall insulator in 2+1 dimensions and the particle-hole symmetric insulator in 1+1 dimensions in terms of massive Dirac fermions. Integrating out the massive…
We study the interaction between a topological insulator nanoparticle and a quantum dot subject to an applied electric field. The electromagnetic response of the topological insulator is derived from axion electrodynamics in the quasistatic…
The modern implementation of machine learning architectures faces significant challenges due to frequent data transfer between memory and processing units. In-memory computing, primarily through memristor-based analog computing, offers a…
Semiconductor InSb nanowires present a highly intriguing platform with immense potential for applications in spintronics and topological quantum devices. The narrow band gap exhibited by InSb allows for precise tuning of these nanowires,…
The electric field induced quantum phase transition from topological to conventional insulator has been proposed as the basis of a topological field effect transistor [1-4]. In this scheme an electric field can switch 'on' the ballistic…
The band-inverted electron-hole bilayers, such as InAs/GaSb, are an interesting playground for the interplay of quantum spin Hall effect and correlation effects because of the small density of electrons and holes and the relatively small…