The modern implementation of machine learning architectures faces significant challenges due to frequent data transfer between memory and processing units. In-memory computing, primarily through memristor-based analog computing, offers a promising solution to overcome this von Neumann bottleneck. In this technology, data processing and storage are located inside the memory. Here, we introduce a novel approach that utilizes floating-gate Y-Flash memristive devices manufactured with a standard 180 nm CMOS process. These devices offer attractive features, including analog tunability and moderate device-to-device variation; such characteristics are essential for reliable decision-making in ML applications. This paper uses a new machine learning algorithm, the Tsetlin Machine (TM), for in-memory processing architecture. The TM's learning element, Automaton, is mapped into a single Y-Flash cell, where the Automaton's range is transferred into the Y-Flash's conductance scope. Through comprehensive simulations, the proposed hardware implementation of the learning automata, particularly for Tsetlin machines, has demonstrated enhanced scalability and on-edge learning capabilities.
@article{arxiv.2408.09456,
title = {In-Memory Learning Automata Architecture using Y-Flash Cell},
author = {Omar Ghazal and Tian Lan and Shalman Ojukwu and Komal Krishnamurthy and Alex Yakovlev and Rishad Shafik},
journal= {arXiv preprint arXiv:2408.09456},
year = {2024}
}