Related papers: 2D Canonical Approach for Beating the Boltzmann Ty…
The speed of writing of state-of-the-art ferromagnetic memories is physically limited by an intrinsic GHz threshold. Recently, an alternative research direction has been initiated by realizing memory devices based on antiferromagnets in…
The fundamental building blocks of modern silicon-based microelectronics, such as double gate transistors in non-volatile Flash memories, are based on the control of electrical resistance by electrostatic charging. Flash memories could soon…
In the past decade, semiconducting carbon nanotube thin films have been recognized as contending materials for wide-ranging applications in electronics, energy, and sensing. In particular, improvements in large-area flexible electronics…
Macroscopic assemblies of one- and two-dimensional materials promise to translate nanoscale electronic properties into device-scale performance, yet the microscopic principles governing charge transport in such networks remain unresolved.…
A combination of the memory function formalism and time-dependent density-functional theory is applied to transport in dilute magnetic semiconductors. The approach considers spin and charge disorder and electron-electron interaction on an…
We consider the electronic current through a one-dimensional conductor in the ballistic transport regime and show that the quantum oscillations of a weakly pinned single scattering target results in a temperature- and bias-voltage…
In this work, we investigate the intrinsic limits of subthreshold slope in a dual gated bilayer graphene transistor using a coupled self-consistent Poisson-bandstructure solver. We benchmark the solver by matching the bias dependent bandgap…
Using bosonization techniques for (2+1)D systems, we show that the transverse conductance for a system with general current interactions, when measured between perfect Hall regions is not renormalized at low temperatures. Our method extends…
Well before the atomistic nature of matter was experimentally established, Ludwig Boltzmann's audacious effort to explain the macroscopic world of human experience in terms of the workings of an unseen microscopic world met with vigorous…
We investigate by low-temperature transport experiments the sub-threshold behavior of triple-gate silicon field-effect transistors. These three-dimensional nano-scale devices consist of a lithographically defined silicon nanowire surrounded…
We report on electronic transport measurements of electrostatically gated nano-devices of the semimetal WTe\textsubscript{2}. High mobility metallic behavior is achieved in the 2D limit by encapsulating thin flakes in an inert atmosphere.…
We present detailed simulations addressing recent electronic interference experiments, where a metallic gate is used to locally modify the Fermi wave-length of the charge carriers. Our numerical calculations are based on a solution of the…
The Casimir force between two ideal conducting surfaces is a special (zero temperature) limit of a more general theory due to Lifshitz. The temperature dependent theory includes correlations in coupled quantum and classical fluctuation…
Landauer's principle introduces a symmetry between computational and physical processes: erasure of information, a logically irreversible operation, must be underlain by an irreversible transformation dissipating energy. Monitoring micro-…
After decades of explorations, suffering from low critical temperature and subtle nature, whether a metallic ground state exists in a two-dimensional system beyond Anderson localization is still a mystery. Supremely, phase coherence could…
An increase in the efficiency of sampling from Boltzmann distributions would have a significant impact on deep learning and other machine-learning applications. Recently, quantum annealers have been proposed as a potential candidate to…
A novel class of antiferromagnets, dubbed altermagnets, exhibit a non-relativistically spin-split band structure reminiscent of $d$-wave superconductors, despite the absence of net magnetization. This unique characteristic enables…
We study the effect of the domain wall on electronic transport properties in wire of ferromagnetic 3$d$ transition metals based on the linear response theory. We considered the exchange interaction between the conduction electron and the…
As semiconductor devices approach the sub-2 nm technology node, identifying the quantum-mechanical limits of contact-resistance scaling becomes imperative; however, the transition from thermionic emission to direct tunneling in this deep…
We analyze a one-dimensional quantum model with off-diagonal disorder, consisting of a sequence of potential energy barriers whose width is a random variable either uniformly or "half-normally" distributed, subjected to an external electric…