Related papers: 2D Canonical Approach for Beating the Boltzmann Ty…
Resistance in superconductors arises from the motion of vortices driven by flowing supercurrents or external electromagnetic fields and may be strongly affected by thermal or quantum fluctuations. The common expectation borne out in…
We demonstrate that a simple phenomenological approach can be used to simulate electronic conduction in molecular wires under thermal effects induced by the surrounding environment. This "Landauer-B\"uttiker's probe technique" can properly…
Bismuth and its alloys provide a paradigm to realize three dimensional materials whose low-energy effective theory is given by Dirac equation in 3+1 dimensions. We study the quantum transport properties of three dimensional Dirac materials…
By developing a two-dimensional (2D) full quantum simulation, the attributes of carbon nanotube field-effect transistors (CNTFETs) in different temperatures have been comprehensively investigated. Simulations have been performed by…
Technology based on memristors, resistors with memory whose resistance depends on the history of the crossing charges, has lately enhanced the classical paradigm of computation with neuromorphic architectures. However, in contrast to the…
Although the Boltzmann transport equation (BTE) has been exploited to investigate non-diffusive phonon transport for decades, due to the challenges of solving this integro-differential equation, most standard techniques for thermal…
We afford an experimentally feasible platform to study Boltzmann negative temperatures. Our proposal takes advantage of well-known techniques of engineering Hamiltonian to achieve steady states with highly controllable population inversion.…
We develop in this paper a theoretical framework that applies to the intermediate regime between the Coulomb blockade and the Luttinger liquid behavior in multi-walled carbon nanotubes. Our main goal is to confront the experimental…
We calculate the electronic resistivity of a GaAs-based semiconductor quantum wire in the presence of acoustic phonon scattering. We find that the usual Drude-Boltzmann transport theory leads to a low temperature activated behavior instead…
The metal-semiconductor contact is a major factor limiting the shrinking of transistor dimension to further increase device performance. In-plane edge contacts have the potential to achieve lower contact resistance due to stronger orbital…
A theory for thermodynamic induction (TI) under isothermal conditions is presented. This includes a treatment of the Helmholtz free energy budget available for a gate variable to utilize towards aiding another variable's approach towards…
The 2D superconductor-insulator transition in disordered ultrathin amorphous bismuth films has been tuned both by electrostatic electron doping using the electric field effect and by the application of parallel magnetic fields.…
In ultra-high quality two-dimensional (2D) materials the mean free paths of phonons and electrons relative to all mechanisms of scattering can be much greater than a size of a sample. In this case the most intensive type of scattering of…
The primary mechanism of operation of almost all transistors today relies on electric-field effect in a semiconducting channel to tune its conductivity from the conducting 'on'-state to a non-conducting 'off'-state. As transistors continue…
We describe and discuss the low-temperature resistivity (and the temperature-dependent inelastic scattering rate) of several different doped 2D semiconductor systems from the perspective of the Planckian hypothesis asserting that…
Low temperature carrier transport properties in two-dimensional (2D) semiconductor systems can be theoretically well-understood within a mean-field type RPA-Boltzmann theory as being limited by scattering from screened Coulomb disorder…
The ability to control electronic properties of a material by externally applied voltage is at the heart of modern electronics. In many cases, it is the so-called electric field effect that allows one to vary the carrier concentration in a…
Exchange bias (EB) is a cornerstone of modern magnetic memory and sensing technologies. Its extension to the realm of two-dimensional (2D) van der Waals (vdW) magnets holds promise for revolutionary advancements in miniaturized and…
Recent electronic transport experiments using metallic contacts attached to proteins identified some 'stylized facts' which contradict conventional wisdom that increasing either the spatial distance between the electrodes or the temperature…
According to Landauer's principle, a minimum amount of energy proportional to temperature must be dissipated during the erasure of a classical bit of information compensating the entropy loss, thereby linking the information and…