Related papers: 2D Canonical Approach for Beating the Boltzmann Ty…
Two-component conductors -- e.g., semi-metals and narrow band semiconductors -- often exhibit unusually strong magnetoresistance in a wide temperature range. Suppression of the Hall voltage near charge neutrality in such systems gives rise…
Nanofluidic devices prompts unconventional ion transports appealing to energy and information technologies, thanks to the susceptibility of confined electric double layers (EDL) to various external physical fields. Although experimental…
We adopt a stochastic approach to study the charge transport in transistors. In this approach, the hole and electron densities are ruled by diffusion-reaction stochastic partial differential equations satisfying local detailed balance…
In stark contrast with three-dimensional (3D) nanostructures, we show that boundary scattering in two-dimensional (2D) nanoribbons alone does not lead to a finite phonon mean free path. If combined with an intrinsic scattering mechanism, 2D…
The transition from normal state to superconductive state is a condensation (Bose-Einstein condensation) process. As an example of Bose-Einstein condensation, the condensation process of superconductivity is investigated in detail. The…
A paradigm for isothermal, mechanical rectification of stochastic fluctuations is introduced in this paper. The central idea is to transform energy injected by random perturbations into rigid-body rotational kinetic energy. The prototype…
We use the quasiclassical theory of superconductivity to calculate the electronic contribution to the thermal conductivity. The theory is formulated for low temperatures when heat transport is limited by electron scattering from random…
Band-to-band tunnelling field-effect transistors (TFETs) have long been considered as promising candidates for future low-power logic applications. However, fabricated TFETs rarely reach sub-60 mV/dec sub-threshold swings (SS) at room…
The integer quantum Hall effect can be observed in a two-dimensional conductor penetrated by a perpendicular magnetic field and with edges connecting the current carrying contacts. Its signature is a state of quantized Hall and…
Memristors are continuously tunable resistors that emulate synapses. Conceptualized in the 1970s, they traditionally operate by voltage-induced displacements of matter, but the mechanism remains controversial. Purely electronic memristors…
We carry out a layer-by-layer investigation to understand electron transport across metal-insulator-metal junctions. Interfacial structures of junctions were studied and characterized using first-principles density functional theory within…
Erasure of the binary memory, 0 or 1, is an essential step for digital computation involving irreversible logic operations. The erasure of a bit of a classical bit of memory is accompanied by the evolution of a minimum amount of heat set by…
The temperature coefficient of resistance (TCR) is one of the most fundamental properties of a material. Semiconductor materials exhibiting high TCR are promising candidates for applications in high-resolution thermal imaging for autonomous…
The classic Landauer bound can be lowered when erasure errors are permitted. Here we point out that continuous phase transitions characterized by an order parameter can also be viewed as information erasure by resetting a certain number of…
High-performance, low-power transistors are core components of advanced integrated circuits, and the ultimate limitation of Moore's law has made the search for new alternative pathways an urgent priority. Two-dimensional (2D) materials have…
We report the observation of TEMPERATURE-INDUCED transitions between insulator, metal, and quantum-Hall behaviors for transport coefficients in the very dilute high mobility two-dimensional electron system in silicon. We consider the…
We present a class of 2D systems which shows a counterintuitive property that contradicts a semi classical intuition: A 2D quantum particle "prefers" tunneling through a barrier rather than traveling above it. Viewing the one particle 2D…
In this work, the performance of Tunnel Field-Effect Transistors (TFETs) based on two-dimensional Transition Metal Dichalcogenide (TMD) materials is investigated by atomistic quantum transport simulations. One of the major challenges of…
An important consideration in miniaturizing transistors is maximizing the coupling between the gate and the semiconductor channel. A nanowire with a coaxial metal gate provides optimal gate-channel coupling, but has only been realized for…
Quantum correlation and hot-carrier transport represent two fundamentally distinct regimes of electronic conduction, rarely accessible within the same device. Here, we report a state-of-the-art monolayer transition metal dichalcogenides…