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Sub-micron-thick layers of hexagonal boron nitride (hBN) exhibit high in-plane thermal conductivity, useful optical properties, and serve as dielectric encapsulation layers with low electrostatic inhomogeneity for graphene devices. Despite…
Efficiently capturing the three-dimensional spatiotemporal distributions of temperature is of great significance for alleviating hotspot issues in 3D FinFETs. However, most previous thermal simulations mainly focused on the steady-state…
Spin defects in solid-state materials are strong candidate systems for quantum information technology and sensing applications. Here we explore in details the recently discovered negatively charged boron vacancies ($V_B^-$) in hexagonal…
Neutrons are encountered in many different fields, including condensed matter physics, space exploration, nuclear power, and healthcare. Neutrons interacting with a biological target produce secondary charged particles that are damaging to…
Virtually all electronic systems try to optimize a fundamental trade-off between higher performance and lower power consumption. The latter becomes critical in mobile computing systems, such as smartphones, which rely on passive cooling.…
Multi-chiplet architectures enabled by glass interposer offer superior electrical performance, enable higher bus widths due to reduced crosstalk, and have lower capacitance in the redistribution layer than current silicon interposer-based…
The relatively low thermal conductivity of biodegradable polylactic acid (PLA) has limited its applications in various fields. To address this issue, the incorporation of nanofillers, such as boron nitride nanosheets (BNNSs), has emerged as…
Boron nitride (BN) is an exceptional material and among its polymorphs, two-dimensional (2D) hexagonal and three-dimensional (3D) cubic BN (h-BN and c-BN) phases are most common. The phase stability regimes of these BN phases are still…
It is known that 3D-ICs suffer from hot spot temperatures that can reach thousands of degrees, if they are not cooled to reasonable operating temperatures. The problem of hot spots is not limited to the high temperatures of the IC; thermal…
AlN-GaN heterostructures are central to high-power and high-frequency electronics, including RF devices, power converters, and AI accelerators. An intermediate Al1-xGaxN (AlGaN) layer is often present, either unintentionally during growth…
To achieve high performance thermoelectric materials and devices, thermoelectric transistors, which integrate thermoelectric effects with transistor technology, represent a promising approach. Here p type Bi0.5Sb1.5Te3 and n type…
With technology scaling, the size of cache systems in chip-multiprocessors (CMPs) has been dramatically increased to efficiently store and manipulate a large amount of data in future applications and decrease the gap between cores and…
Recent embedded systems are designed with high-performance System-on-Chips (SoCs) to satisfy the computational needs of complex applications widely used in real life, such as airplane controllers, autonomous driving automobiles, medical…
Hot-spots are considered among the unavoidable consequences of the high integration density of 3D-ICs. Eliminating hot spots requires employing efficient cooling techniques. Using embedded channels, liquid cooling systems can be designed to…
As research and deployment of AI grows, the computational burden to support and sustain its progress inevitably does too. To train or fine-tune state-of-the-art models in NLP, computer vision, etc., some form of AI hardware acceleration is…
Two-dimensional (2D) transition metal dichalcogenides (TMDCs) are the subject of intense investigation for applications in optics, electronics, catalysis, and energy storage. Their optical and electronic properties can be significantly…
We report experimental and computational studies of thermal transport properties in hexagonal boron nitride (hBN) encapsulated molybdenum disulfide (MoS2) structure using refined optothermal Raman techniques, and reveal very high…
Hexagonal boron nitride (hBN) is a promising material for next-generation semiconductor and optoelectronic devices due to its wide bandgap and remarkable optical properties. To apply this material in the semiconductor industry, it is…
Interface phonon modes that are generated by several atomic layers at the heterointerface play a major role in the interface thermal conductance for nanoscale high-power devices such as nitride-based high-electron-mobility transistors and…
Thermal analysis is increasingly critical in modern integrated circuits, where non-uniform power dissipation and high transistor densities can cause rapid temperature spikes and reliability concerns. Traditional methods, such as FEM-based…