Spin defects in solid-state materials are strong candidate systems for quantum information technology and sensing applications. Here we explore in details the recently discovered negatively charged boron vacancies (VB−) in hexagonal boron nitride (hBN) and demonstrate their use as atomic scale sensors for temperature, magnetic fields and externally applied pressure. These applications are possible due to the high-spin triplet ground state and bright spin-dependent photoluminescence (PL) of the VB−. Specifically, we find that the frequency shift in optically detected magnetic resonance (ODMR) measurements is not only sensitive to static magnetic fields, but also to temperature and pressure changes which we relate to crystal lattice parameters. Our work is important for the future use of spin-rich hBN layers as intrinsic sensors in heterostructures of functionalized 2D materials.
@article{arxiv.2102.10890,
title = {Sub-nanoscale Temperature, Magnetic Field and Pressure sensing with Spin Centers in 2D hexagonal Boron Nitride},
author = {Andreas Gottscholl and Matthias Diez and Victor Soltamov and Christian Kasper and Andreas Sperlich and Mehran Kianinia and Carlo Bradac and Igor Aharonovich and Vladimir Dyakonov},
journal= {arXiv preprint arXiv:2102.10890},
year = {2021}
}