Hexagonal boron nitride (hBN) is a promising material for next-generation semiconductor and optoelectronic devices due to its wide bandgap and remarkable optical properties. To apply this material in the semiconductor industry, it is necessary to grow large-area layers on the wafer-scale. For this purpose, chemical vapor deposition methods are highly preferable. However, in the case of epitaxial BN, its fragility and susceptibility to delamination and fold formation during wet processing, such as lithography, present significant challenges to its integration into device fabrication. In this work, we introduce a controlled delamination and redeposition method that effectively prevents the layer from degradation, allowing for multi-step lithographic processes. This approach is applicable to BN layers across a broad thickness range, from tens to hundreds of nanometers, and ensures compatibility with standard photolithographic techniques without compromising the material's intrinsic properties. By addressing key processing challenges, this method paves the way for integrating epitaxial BN into advanced semiconductor and optoelectronic technologies.
@article{arxiv.2501.18735,
title = {Mitigation of Delamination of Epitaxial Large-Area Boron Nitride for Semiconductor Processing},
author = {Jakub Rogoza and Jakub Iwanski and Katarzyna Ludwiczak and Bartosz Furtak and Aleksandra Krystyna Dabrowska and Mateusz Tokarczyk and Johannes Binder and Andrzej Wysmolek},
journal= {arXiv preprint arXiv:2501.18735},
year = {2025}
}