Hexagonal boron nitride (h-BN) is the only known material aside from graphite with a structure composed of simple, stable, non-corrugated atomically thin layers. While historically used as lubricant in powder form, h-BN layers have become particularly attractive as an ultimately thin insulator. Practically all emerging electronic and photonic device concepts rely on h-BN exfoliated from small bulk crystallites, which limits device dimensions and process scalability. Here, we address this integration challenge for mono-layer h-BN via a chemical vapour deposition process that enables crystal sizes exceeding 0.5 mm starting from commercial, reusable platinum foils, and in unison allows a delamination process for easy and clean layer transfer. We demonstrate sequential pick-up for the assembly of graphene/h-BN heterostructures with atomic layer precision, while minimizing interfacial contamination. Our process development builds on a systematic understanding of the underlying mechanisms. The approach can be readily combined with other layered materials and opens a scalable route to h-BN layer integration and reliable 2D material device layer stacks.
@article{arxiv.1807.11340,
title = {A peeling approach for integrated manufacturing of large mono-layer h-BN crystals},
author = {Ruizhi Wang and David G. Purdie and Ye Fang and Fabien Massabuau and Philipp Braeuninger-Weimer and Oliver J. Burton and Raoul Blume and Robert Schloegl and Antonio Lombardo and Robert S. Weatherup and Stephan Hofmann},
journal= {arXiv preprint arXiv:1807.11340},
year = {2018}
}