Related papers: Strained Donor-Bound Excitons in $^{28}$Si
Background: Neutron transfer measurements for the $^{18}$O + $^{28}$Si system have shown that the experimental one-neutron and two-neutron transfer cross sections are well reproduced with spectroscopic amplitudes from two different shell…
The dependence of the g-factors of semiconductor donors on applied electric and magnetic fields is of immense importance in spin based quantum computation and in semiconductor spintronics. The donor g-factor Stark shift is sensitive to the…
Proposed silicon-based quantum-computer architectures have attracted attention because of their promise for scalability and their potential for synergetically utilizing the available resources associated with the existing Si technology…
A new $^{11}$Be($d,p$)$^{12}$Be transfer reaction experiment was carried out in inverse kinematics at 26.9$A$ MeV, with special efforts devoted to the determination of the deuteron target thickness and of the required optical potentials…
In this paper we examine the effects of varying several experimental parameters in the Kane quantum computer architecture: A-gate voltage, the qubit depth below the silicon oxide barrier, and the back gate depth to explore how these…
We have studied the zero magnetic field resistivity of unique high- mobility two-dimensional electron system in silicon. At very low electron density (but higher than some sample-dependent critical value, $n_{cr}\sim 10^{11}$ cm$^{-2}$),…
Cross sections for e^+p neutral current deep inelastic scattering have been measured at a centre-of-mass energy of sqrt{s}=318 GeV with the ZEUS detector at HERA using an integrated luminosity of 63.2 pb^-1. The double-differential cross…
We investigate the general solution with the symmetry ISO(1,p)xSO(9-p) of Type II supergravity (the three-parameter solution) from the viewpoint of the superstring theory. We find that one of the three parameters (c_1) is closely related to…
Using density functional theory (DFT) and density functional perturbation theory (DFPT), the band structure, phonon dispersion and electron phonon coupling matrix were calculated for silicon (Si), diamond and cubic boron nitride (cBN). From…
Donors in silicon, conceptually described as hydrogen atom analogues in a semiconductor environment, have become a key ingredient of many "More-than-Moore" proposals such as quantum information processing [1-5] and single-dopant electronics…
Resonant interaction between excitonic transitions of molecules and localized electromagnetic field allows the formation of hybrid light-matter polaritonic states. This hybridization of the light and the matter states has been shown to be…
We present strain tuning of excitonic emission in monolayer MoSe$_2$ by using a high-temperature physical vapor deposition (PVD). The use of two amorphous substrates, Si$_{3}$N$_{4}$ and SiO$_{2}$, provides two setpoints to induce distinct…
We study single- and multi-quantum transitions of the nuclear spins of ionized arsenic donors in silicon and find quadrupolar effects on the coherence times, which we link to fluctuating electrical field gradients present after the…
We propose and demonstrate a relaxed-SiGe/strained-Si (SiGe/s-Si) enhancement-mode gate stack for quantum dots. The enhancement-mode SiGe/s-Si structure is pursued because it spaces the quantum dot away from charge and spin defect rich…
In this paper we report on a systematic search for a neutral boson in the mass range between 5 and 15 MeV/c$^{2}$ in the decay of highly excited nuclei. Its signature is found a deviation in the angular correlation of the $e^+e^-$ pairs…
We report a neutron scattering study of a ferroelectric phase transition in Sr$_{0.61}$Ba$_{0.39}$Nb$_2$O$_6$ (SBN-61). The ferroelectric polarization is along the crystallographic $c$-axis but the transverse acoustic branch propagating…
Substitutional donor atoms in silicon are promising qubits for quantum computation with extremely long relaxation and dephasing times demonstrated. One of the critical challenges of scaling these systems is determining inter-donor distances…
Gate control of phosphorus donor based charge qubits in Si is investigated using a tight-binding approach. Excited molecular states of P2+ are found to impose limits on the allowed donor separations and operating gate voltages. The effects…
In the framework of boundary conformal field theory we consider a flat unstable D$p$-brane in the presence of a large constant electromagnetic field. Specifically, we study the case that the electromagnetic field satisfy the following three…
The deformation of viscoelastic drops under electric fields plays a crucial role in applications such as microfluidics, inkjet printing, and electrohydrodynamic manipulation of complex fluids. This study examines the deformation and breakup…